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參數(shù)資料
| 型號(hào)： | M58LW032C110N1F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，統(tǒng)一座，突發(fā)3V電源快閃記憶體 |
| 文件頁數(shù)： | 46/61頁 |
| 文件大?。?/td> | 845K |
| 代理商： | M58LW032C110N1F |
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M58LW032C
46/61
APPENDIX B. COMMON FLASH INTERFACE - CFI
The Common Flash Interface is a JEDEC ap-
proved, standardized data structure that can be
read from the Flash memory device. It allows a
system software to query the device to determine
various electrical and timing parameters, density
information and functions supported by the mem-
ory. The system can interface easily with the de-
vice, enabling the software to upgrade itself when
necessary.
When the CFI Query Command (RCFI) is issued
the device enters CFI Query mode and the data
structure is read from the memory. Tables 26, 27,
28, 29, 30 and 31 show the addresses used to re-
trieve the data.
Table 26. Query Structure Overview
Note: 1. Offset 15h defines P which points to the Primary Algorithm Extended Query Address Table.
2. Offset 19h defines A which points to the Alternate Algorithm Extended Query Address Table.
3. SBA is the Start Base Address for each block.
Table 27. CFI - Query Address and Data Output
Note: 1. Query Data are always presented on DQ7-DQ0. DQ15-DQ8 are set to ’0’.
2. Offset 19h defines A which points to the Alternate Algorithm Extended Query Address Table.
Offset
Sub-section Name
Description
00h
Manufacturer Code
01h
Device Code
10h
CFI Query Identification String
Command set ID and algorithm data offset
1Bh
System Interface Information
Device timing and voltage information
27h
Device Geometry Definition
Flash memory layout
P(h)
(1)
Primary Algorithm-specific Extended Query Table
Additional information specific to the Primary
Algorithm (optional)
A(h)
(2)
Alternate Algorithm-specific Extended Query Table
Additional information specific to the Alternate
Algorithm (optional)
(SBA+02)h
Block Status Register
Block-related Information
Address
A21-A1
Data
Instruction
10h
51h
"Q"
Query ASCII String
51h; "Q"
52h; "R"
59h; "Y"
11h
52h
"R"
12h
59h
"Y"
13h
01h
Primary Vendor:
Command Set and Control Interface ID Code
14h
00h
15h
31h
Primary algorithm extended Query Address Table: P(h)
16h
00h
17h
00h
Alternate Vendor:
Command Set and Control Interface ID Code
18h
00h
19h
00h
Alternate Algorithm Extended Query address Table
1Ah
(2)
00h
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PDF描述 |
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| M58LW032C110N1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N6 | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N6E | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N6F | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N6T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW032C110N1T | 功能描述:閃存 4Mx8 or 2Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW032C110N6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
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