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參數(shù)資料
| 型號： | M58LW032C110N1F |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，統(tǒng)一座，突發(fā)3V電源快閃記憶體 |
| 文件頁數(shù)： | 24/61頁 |
| 文件大?。?/td> | 845K |
| 代理商： | M58LW032C110N1F |
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M58LW032C
24/61
Table 6. Configuration Codes
Note: 1. DQ2-DQ7 are reserved
2. When STS pin is pulsing it remains Low for a typical time of 250ns.
Table 7. Read Electronic Signature
Note: 1. SBA is the Start Base Address of each block, BCR is Configuration Register data, PRD is Protection Register Data.
2. Base Address, refer to Figure 8 and Table 8 for more information.
Table 8. Read Protection Register
Configuration
Code
DQ1
DQ2
Mode
STS Pin
Description
00h
0
0
Ready/Busy
V
OL
during P/E
operations
Hi-Z when the
memory is ready
The STS pin is Low during Program and
Erase operations and high impedance when
the memory is ready for any Read, Program
or Erase operation.
01h
0
1
Pulse on Erase
complete
Pulse Low then
High when
operation
completed
(2)
Supplies a system interrupt pulse at the end
of a Block Erase operation.
02h
1
0
Pulse on
Program
complete
Supplies a system interrupt pulse at the end
of a Program operation.
03h
1
1
Pulse on Erase
or Program
complete
Supplies a system interrupt pulse at the end
of a Block Erase or Program operation.
Code
Address (A21-A1)
Data (DQ15-DQ0)
Manufacturer Code
000000h
0020h
Device Code
000001h
8822h
Block Protection Status
SBA+02h
0000h (Block Unprotected)
0001h (Block Protected)
Configuration Register
000005h
BCR
Protection Register
000080h
(2)
PRD
Word
Use
A8
A7
A6
A5
A4
A3
A2
A1
Lock
Factory, User
1
0
0
0
0
0
0
0
0
Factory (Unique ID)
1
0
0
0
0
0
0
1
1
Factory (Unique ID)
1
0
0
0
0
0
1
0
2
Factory (Unique ID)
1
0
0
0
0
0
1
1
3
Factory (Unique ID)
1
0
0
0
0
1
0
0
4
User
1
0
0
0
0
1
0
1
5
User
1
0
0
0
0
1
1
0
6
User
1
0
0
0
0
1
1
1
7
User
1
0
0
0
1
0
0
0
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| M58LW032C110N1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N6 | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N6E | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N6F | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N6T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW032C110N1T | 功能描述:閃存 4Mx8 or 2Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58LW032C110N6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032C110N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
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