參數(shù)資料
型號: M58BW016DB80ZA6F
廠商: NUMONYX
元件分類: PROM
英文描述: 512K X 32 FLASH 3V PROM, 80 ns, PBGA80
封裝: 10 X 12 MM, 1 MM PITCH, LBGA-80
文件頁數(shù): 35/63頁
文件大?。?/td> 901K
代理商: M58BW016DB80ZA6F
40/63
Table 20. Synchronous Burst Read AC Characteristics
Note: 1. Data output should be read on the valid clock edge.
2. For other timings see Table 16, Asynchronous Bus Read Characteristics.
Figure 15. Synchronous Burst Read (Data Valid from ’n’ Clock Rising Edge)
Note: For set up signals and timings see Synchronous Burst Read.
Symbol
Parameter
Test Condition
M58BW016
Unit
80
90
100
tAVLL
Address Valid to Latch Enable Low
E = VIL
Min
0
ns
tBHKH
Burst Address Advance High to Valid Clock
Edge
E = VIL, G = VIL,
L = VIH
Min
8
ns
tBLKH
Burst Address Advance Low to Valid Clock
Edge
E = VIL, G = VIL,
L = VIH
Min
8
ns
tELLL
Chip Enable Low to Latch Enable low
Min
0
ns
tGLQV
Output Enable Low to Output Valid
E = VIL, L = VIH
Min
25
ns
tKHAX
Valid Clock Edge to Address Transition
E = VIL
Min
5
ns
tKHLL
Valid Clock Edge to Latch Enable Low
E = VIL
Min
0
ns
tKHLX
Valid Clock Edge to Latch Enable Transition
E = VIL
Min
0
ns
tKHQX
Valid Clock Edge to Output Transition
E = VIL, G = VIL,
L = VIH
Min
3
ns
tLLKH
Latch Enable Low to Valid Clock Edge
E = VIL
Min
6
ns
tQVKH
(1)
Output Valid to Valid Clock Edge
E = VIL, G = VIL,
L = VIH
Min
6
ns
tRLKH
Valid Data Ready Low to Valid Clock Edge
E = VIL, G = VIL,
L = VIH
Min
6
ns
tKHQV
Valid Clock Edge to Output Valid
E = VIL, G = VIL,
L = VIH
Max
11
ns
AI04408b
K
n+5
n+4
n+3
n+2
n+1
n
DQ0-DQ31
tQVKH
tKHQX
Q0
Q1
Q2
Q3
Q4
Q5
SETUP
Burst Read
Q0 to Q3
tKHQV
Note: n depends on Burst X-Latency
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