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參數(shù)資料
| 型號(hào)： | M58BW016DB100T6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| 中文描述： | 16兆位512KB的X32號(hào)，引導(dǎo)塊，突發(fā)3V電源閃存 |
| 文件頁(yè)數(shù)： | 1/63頁(yè) |
| 文件大?。?/td> | 895K |
| 代理商： | M58BW016DB100T6T |
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May 2003
M58BW016BT, M58BW016BB
M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst)
3V Supply Flash Memories
PE4FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
DD
= 2.7V to 3.6V for Program, Erase and
Read
– V
DDQ
= V
DDQIN
= 2.4V to 3.6V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
I
HIGH PERFORMANCE
– Access Time: 80, 90 and 100ns
– 56MHz Effective Zero Wait-State Burst Read
– Synchronous Burst Reads
– Asynchronous Page Reads
I
HARDWARE BLOCK PROTECTION
– WP pin Lock Program and Erase
I
SOFTWARE BLOCK PROTECTION
– Tuning Protection to Lock Program and
Erase with 64 bit User Programmable Pass-
word (M58BW016B version only)
I
OPTIMIZED for FDI DRIVERS
– Fast Program / Erase suspend latency
time < 6μs
– Common Flash Interface
I
MEMORY BLOCKS
– 8 Parameters Blocks (Top or Bottom)
– 31 Main Blocks
I
LOW POWER CONSUMPTION
– 5μA Typical Deep Power Down
– 60μA Typical Standby
– Automatic Standby after Asynchronous Read
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M58BW016xT: 8836h
– Bottom Device Code M58BW016xB: 8835h
Figure 1. Packages
BGA
LBGA80 (ZA)
10 x 8 ball array
PQFP80 (T)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58BW032DT60ZA3T | 32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory |
| M58CR064C12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064D12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064P12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58CR064Q12ZB6T | 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58BW016DB100ZA3T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DB100ZA6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories |
| M58BW016DB70T3FF | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70T3FT | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
| M58BW016DB70ZA3FF | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (512 Kb x 32, boot block, burst) 3 V supply Flash memories |
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