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參數(shù)資料
| 型號： | M58BW032DT60ZA3T |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory |
| 中文描述： | 32兆位（1兆X32號，引導塊，突發(fā)）3.3V電源快閃記憶體 |
| 文件頁數(shù)： | 1/60頁 |
| 文件大?。?/td> | 906K |
| 代理商： | M58BW032DT60ZA3T |
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1/60
PRELIMINARY DATA
November 2004
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M58BW032BT, M58BW032BB
M58BW032DT, M58BW032DB
32 Mbit (1Mb x32, Boot Block, Burst)
3.3V Supply Flash Memory
FEATURES SUMMARY
SUPPLY VOLTAGE
–
V
DD
= 3.0V to 3.6V for Program, Erase
and Read
–
V
DDQ
= V
DDQIN
= 1.6V to 3.6V for I/O
Buffers
HIGH PERFORMANCE
–
Access Time: 45, 55 and 60ns
–
75MHz Effective Zero Wait-State Burst
Read
–
Synchronous Burst Reads
–
Asynchronous Page Reads
MEMORY ORGANIZATION
– Eight 64 Kbit small parameter Blocks
– Four 128Kbit large parameter Blocks (of
which one is OTP)
– Sixty-two 512Kbit main Blocks
HARDWARE BLOCK PROTECTION
–
WP pin Lock Program and Erase
–
V
PEN
signal for Program/Erase Enable
SOFTWARE BLOCK PROTECTION
–
Tuning Protection to Lock Program and
Erase with 64-bit User Programmable
Password (M58BW032B version only)
SECURITY
–
64-bit Unique Device Identifier (UID)
FAST PROGRAMMING
–
Write to Buffer and Program capability
OPTIMIZED FOR FDI DRIVERS
–
Common Flash Interface (CFI)
–
Fast Program/Erase Suspend feature in
each block
LOW POWER CONSUMPTION
–
100μA Typical Standby
■
■
■
■
■
■
■
■
■
Figure 1. Packages
■
ELECTRONIC SIGNATURE
–
Manufacturer Code: 20h
–
Top Device Code M58BW032xT: 8838h
–
Bottom Device Code M58BW032xB:
8837h
OPERATING TEMPERATURE RANGE
–
Automotive (Grade 3):
–
40 to 125°C
–
Industrial (Grade 6):
–
40 to 90°C
■
BGA
LBGA80 (ZA)
10 x 8 ball array
PQFP80 (T)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M58BW032DT60ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory |
| M58BW16F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 or 32 Mbit (x 32, boot block, burst) 3.3 V supply Flash memories |
| M58BW16FB4D150 | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays |
| M58BW16FB4T3 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 or 32 Mbit (x 32, boot block, burst) 3.3 V supply Flash memories |
| M58BW16FB4T3F | 功能描述:IC FLASH 16MBIT 45NS 80PQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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