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參數(shù)資料
| 型號： | M54585KP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 50 V, 8 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 20P2E-A, 20 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 69K |
| 代理商： | M54585KP |
Jan. 2000
ton
toff
50%
INPUT
OUTPUT
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Zo = 50,
VI = 3.85V
(2)Input-output conditions : RL = 25
, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
PG
50
RL
OUTPUT
INPUT
Vo
CL
OPEN
Measured device
“H” input voltage
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75
°C)
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
ns
—
12
240
—
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
ton
toff
CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
Parameter
—
0
Limits
min
typ
max
Symbol
Unit
—
VO
Output voltage
“L” input voltage
Duty Cycle
≤ 10%
Duty Cycle
≤ 50%
Collector current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
IC
VIH
50
200
70
30
0.6
V
mA
V
VIL
Ic
≤ 400mA
Ic
≤ 200mA
0
3.85
3.4
0
—
2.4
1.6
1.8
18
2.4
100
—
ICEO = 100
A
VI = 3.85V, IC = 400mA
VI = 3.4V, IC = 200mA
II = 3.85V
VI = 25V
IF = 400mA
VR = 50V
VCE = 4V, IC = 350mA, Ta = 25
°C
—
1.3
1.0
0.95
8.7
1.5
—
2500
50
—
1000
V (BR) CEO
V
Symbol
Unit
Parameter
Test conditions
Limits
min
typ+
max
Collector-emitter breakdown voltage
VCE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75
°C)
II
VF
IR
hFE
Input current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
V
mA
V
A
—
+ : The typical values are those measured under ambient temperature (Ta) of 25
°C. There is no guarantee that these values are obtained under any
conditions.
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