參數(shù)資料
型號: M54585P
元件分類: 功率晶體管
英文描述: 0.5 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
封裝: 18P4G, 18 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 75K
代理商: M54585P
Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54585P and M54585FP are eight-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BVCEO
≥ 50V)
High-current driving (Ic(max) = 500mA)
With clamping diodes
Driving available with TTL output or with PMOS IC output
Wide operating temperature range (Ta = –20 to +75
°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments such as LEDs and lamps, and MOS-bipolar logic IC
interfaces
FUNCTION
The M54585P and M54585FP each have eight circuits,
which are NPN Darlington transistors. Input transistors have
resistance of 2.7k
between the base and input pin. A spike-
killer clamping diode is provided between each output pin
and GND. Output transistor emitters are all connected to the
GND pin.
Collector current is 500mA maximum. The maximum collec-
tor-emitter voltage is 50V.
The M54585FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
7.2K
3K
2.7K
COM
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The eight circuits share the COM and GND.
1
IN1
IN2
IN3
IN4
IN5
IN6
IN7
→COM COMMON
→O8
IN8
GND
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
→O7
→O6
→O5
→O4
→O3
→O2
→O1
1
NC
IN1
IN2
IN3
IN4
IN5
IN6
COMMON
→O8
IN7
IN8
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
→COM
GND
10
11
→O7
→O6
→O5
→O4
→O2
→O3
→O1
NC
NC : No connection
Package type 18P4G(P)
INPUT
OUTPUT
INPUT
OUTPUT
Package type 20P2N-A(FP)
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