參數(shù)資料
型號: M54516P
元件分類: 功率晶體管
英文描述: 0.5 A, 25 V, 5 CHANNEL, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 1/4頁
文件大?。?/td> 30K
代理商: M54516P
Jan. 2000
PIN CONFIGURATION
DESCRIPTION
M54516P is five-circuit Darlington transistor arrays. The cir-
cuits are made of NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
FEATURES
q Medium breakdown voltage (BVCEO
≥ 25V)
q
High-current driving (Ic(max) = 500mA)
q Driving available with PMOS IC output
q
Wide operating temperature range (Ta = –20 to +75
°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54516P has five circuits consisting of NPN Darlington
transistors. These ICs have resistance of 20k
between in-
put transistor bases and input pins. The output transistor
emitters are all connected to the GND pin (pin 7).
Collector current is 500mA maximum. Collector-emitter sup-
ply voltage is 25V maximum.
CIRCUIT DIAGRAM
V
mA
V
W
°C
–0.5 ~ +25
500
–0.5 ~ +25
1.47
–20 ~ +75
–55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75
°C)
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25
°C, when mounted on board
VCEO
IC
VI
Pd
Topr
Tstg
20K
2K
20K
INPUT
OUTPUT
GND
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The five circuits share the GND.
1
NC
IN1
IN2
IN3
IN4
IN5
2
3
4
5
6
7
14
13
12
11
10
9
8
NC
GND
→O5
→O4
→O3
→O2
→O1
NC : No connection
INPUT
OUTPUT
Package type 14P4(P)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54516P
5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY
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相關代理商/技術參數(shù)
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