參數(shù)資料
型號(hào): M54517P
元件分類(lèi): 功率晶體管
英文描述: 0.4 A, 25 V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 30K
代理商: M54517P
Jan. 2000
PIN CONFIGURATION
DESCRIPTION
M54517P is seven-circuit Darlington transistor arrays. The
circuits are made of NPN transistors. Both the semiconduc-
tor integrated circuits perform high-current driving with ex-
tremely low input-current supply.
FEATURES
q Medium breakdown voltage (BVCEO
≥ 25V)
q
High-current driving (Ic(max) = 400mA)
q Driving available with PMOS IC output
q
Wide operating temperature range (Ta = –20 to +75
°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54517P has seven circuits consisting of NPN
Darlington transistors. These ICs have resistance of 20k
between input transistor bases and input pins. The output
transistor emitters are all connected to the GND pin (pin 8).
Collector current is 400mA maximum. Collector-emitter sup-
ply voltage is 25V maximum.
CIRCUIT DIAGRAM
V
mA
V
W
°C
–0.5 ~ +25
400
–0.5 ~ +25
1.47
–20 ~ +75
–55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75
°C)
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25
°C, when mounted on board
VCEO
IC
VI
Pd
Topr
Tstg
20K
2K
20K
INPUT
OUTPUT
GND
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The seven circuits share the GND.
1
IN1
IN2
IN3
IN4
IN5
IN6
IN7
NC
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O7
→O6
→O5
→O4
→O3
→O2
→O1
NC : No connection
INPUT
OUTPUT
Package type 16P4
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54517P
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
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