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參數(shù)資料
| 型號(hào)： | M52S32162A-10BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 1M x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 2M X 16 SYNCHRONOUS DRAM, 8 ns, PBGA54 |
| 封裝： | 8 X 8 MM, LEAD FREE, VFBGA-54 |
| 文件頁(yè)數(shù)： | 15/30頁(yè) |
| 文件大?。?/td> | 787K |
| 代理商： | M52S32162A-10BG |
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ES MT
Read & Write Cycle at Same Bank @Burst Length = 4
M52S32162A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
1.2
15/30
*Note:
1.Minimum row cycle times is required to complete internal DRAM operation.
2.Row precharge can interrupt burst on any cycle. [CAS Latency-1] number of valid output data is available after Row
precharge. Last valid output will be Hi-Z(t
SHZ
) after the clock.
3.Access time from Row active command. tcc*(t
RCD
+CAS latency-1)+t
SAC
4.Ouput will be Hi-Z after the end of burst.(1,2,4,8 bit burst)
Burst can’t end in Full Page Mode.
t
RCD
t
RC
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK
CKE
CS
RAS
CAS
ADDR
DQM
BA
CL=2
CL=3
Ra
Rb
Cb0
t
OH
t
SAC
t
SHZ
t
SHZ
t
RDL
Read
(A-Bank)
Row Active
Precharge
(A-Bank)
(A-Bank)
Precharge
(A-Bank)
Write
(A-Bank)
Row Active
(A-Bank)
*Note3
*Note3
*Note4
*Note4
: Don't care
*Note1
Qa0
Qa1
Qa2
Qa3
Db0
Db3
Db1
Db2
Qa0
Qa1
Qa2
Qa3
Db0
Db3
Db1
Db2
t
RAC
t
RAC
t
RDL
Ca0
A10/AP
Ra
Rb
HIGH
*Note2
WE
t
OH
t
SAC
QC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M52S32162A-10TG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-7.5BG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-7.5TG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M538002 | 524,288-Word x 16-Bit or 1,048,576 x 8-Bit Mask ROM |
| M541 | 262,214-Word x 12-Bit Field Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M52S32162A-10BIG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 32MB 2.5V 100MHZ FBGA54 |
| M52S32162A-10TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52S32162A-10TIG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 32MB 2.5V 100MHZ TSOPII54 |
| M52S32162A-6BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52S32162A-6TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM |
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