參數(shù)資料
型號(hào): M52S32162A-10BG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類(lèi): DRAM
英文描述: 1M x 16Bit x 2Banks Synchronous DRAM
中文描述: 2M X 16 SYNCHRONOUS DRAM, 8 ns, PBGA54
封裝: 8 X 8 MM, LEAD FREE, VFBGA-54
文件頁(yè)數(shù): 13/30頁(yè)
文件大?。?/td> 787K
代理商: M52S32162A-10BG
ES MT
M52S32162A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
1.2
13/30
*Note:
1. All inputs expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA.
BA
Active & Read/Write
0
Bank A
1
Bank B
3.Enable and disable auto precharge function are controlled by A10/AP in read/write command.
A10/AP
BA
Operation
0
Disable auto precharge, leave bank A active at end of burst.
0
1
Disable auto precharge, leave bank B active at end of burst.
0
Enable auto precharge, precharge bank A at end of burst.
1
1
Enable auto precharge, precharge bank B at end of burst.
4.A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP
BA
precharge
0
0
Bank A
0
1
Bank B
1
X
Both Banks
相關(guān)PDF資料
PDF描述
M52S32162A-10TG 1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A-7.5BG 1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A-7.5TG 1M x 16Bit x 2Banks Synchronous DRAM
M538002 524,288-Word x 16-Bit or 1,048,576 x 8-Bit Mask ROM
M541 262,214-Word x 12-Bit Field Memory
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