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參數(shù)資料
| 型號： | M52D32321A-10BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 32Bit x 2Banks Synchronous DRAM |
| 中文描述： | 1M X 32 SYNCHRONOUS DRAM, 8 ns, PBGA90 |
| 封裝： | 8 X 13 MM, LEAD FREE, BGA-90 |
| 文件頁數(shù)： | 2/29頁 |
| 文件大?。?/td> | 707K |
| 代理商： | M52D32321A-10BG |
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ES MT
SDRAM 512K x 32Bit x 2Banks
FEATURES
z
1.8V power supply
z
LVCMOS compatible with multiplexed address
z
Dual banks operation
z
MRS cycle with address key programs
-
CAS Latency (1, 2 & 3 )
-
Burst Length (1, 2, 4, 8 & full page)
-
Burst Type (Sequential & Interleave)
z
EMRS cycle with address key programs.
z
All inputs are sampled at the positive going edge of the
system clock
z
Burst Read Single-bit Write operation
z
Special Function Support.
-
PASR (Partial Array Self Refresh )
-
TCSR (Temperature compensated Self Refresh)
-
DS (Driver Strength)
z
DQM for masking
z
Auto & self refresh
z
64ms refresh period (4K cycle)
PIN CONFIGURATION (TOP VIEW)
M52D32321A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.3
2/29
Synchronous DRAM
GENERAL DESCRIPTION
The M52D32321A is 33,554,432 bits synchronous high
data rate Dynamic RAM organized as 2 x 524,288 words by
32 bits, fabricated with high performance CMOS technology.
Synchronous design allows precise cycle control with the
use of system clock I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high
performance memory system applications.
ORDERING INFORMATION
MAX
Freq.
Part NO.
Package
Comments
M52D32321A -10BG 100MHz 54 Ball VFBGA
Pb-free
M52D32321A -7.5BG 133MHz 54 Ball VFBGA
Pb-free
90 Ball FBGA
1
2
3
4
5
6
7
8
9
A
DQ26 DQ24
VSS
VDD
DQ23 DQ21
B
DQ28 VDDQ VSSQ
VDDQ VSSQ DQ19
C
VSSQ DQ27 DQ25
DQ22 DQ20 VDDQ
D
VSSQ DQ29 DQ30
DQ17 DQ18 VDDQ
E
VDDQ DQ31
NC
NC
DQ16 VSSQ
F
VSS DQM3
A3
A2
DQM2 VDD
G
A4
A5
A6
A10
A0
A1
H
A7
A8
NC
NC
NC
NC
J
CLK
CKE
A9
BA
CS
RAS
K
DQM1
NC
NC
CAS
WE
DQM0
L
VDDQ DQ8
VSS
VDD
DQ7
VSSQ
M
VSSQ DQ10
DQ9
DQ6
DQ5 VDDQ
N
VSSQ DQ12 DQ14
DQ1
DQ3 VDDQ
P
DQ11 VDDQ VSSQ
VDDQ VSSQ
DQ4
R
DQ13 DQ15
VSS
VDD
DQ0
DQ2
相關PDF資料 |
PDF描述 |
|---|---|
| M52D32321A-7.5BG | 512K x 32Bit x 2Banks Synchronous DRAM |
| M52S128168A | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S128168A-10BG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S128168A-10TG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S128168A-7.5BG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M52D32321A-7.5BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM |
| M52D32321A-7.5BIG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 32MB 1.8V 166MHZ VFBGA90 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM, 32MB, 1.8V, 166MHZ, VFBGA90 |
| M52D32321A-7BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Mobile Synchronous DRAM |
| M52D64164A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Mobile Synchronous DRAM |
| M52D64164A-10BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Mobile Synchronous DRAM |
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