參數(shù)資料
型號: M52D32162A-10TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 1M x 16Bit x 2Banks Synchronous DRAM
中文描述: 2M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
封裝: 0.400 INCH, LEAD FREE, TSOP2-54
文件頁數(shù): 9/30頁
文件大?。?/td> 784K
代理商: M52D32162A-10TG
ES MT
Extended Mode Register
BA A11 A10
A9
1
0
0
ATCSR
M52D32162A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.4
9/30
A8
A7
A6
A5
A4
A3
A2
A1
A0 Address bus
0 0 DS
TCSR
PASR
Extended Mode Register
A2-0
000
001
010
011
100
101
110
111
Self Refresh Coverage
Full Array
1/2 of Full Array
1/4 of Full Array
RFU
RFU
RFU
RFU
RFU
PASR
A6-A5
00
01
10
11
Driver Strength
Full Strength
1/2 Strength
1/4 Strength
RFU
DS
A9
0
1
ATCSR
Enable
R
ATCSR
TRUTH TABLE (Deep Power Down Mode)
COMMAND
CKEn-1
CKEn
CS
L
RAS
H
CAS
H
WE
L
DQM BA A10/AP A9~A0
Entry
H
L
X
Deep Power Down Mode
Exit
L
H
X
X
X
X
X
X
(V= Valid, X= Don’t Care, H= Logic High , L = Logic Low)
A4-A3
11
00
01
10
Maximum Case Temperature
85oC
70oC
45oC
15oC
TCSR
相關(guān)PDF資料
PDF描述
M52D32162A-7.5BG 1M x 16Bit x 2Banks Synchronous DRAM
M52D32162A-7.5TG 1M x 16Bit x 2Banks Synchronous DRAM
M52D32321A 512K x 32Bit x 2Banks Synchronous DRAM
M52D32321A-10BG 512K x 32Bit x 2Banks Synchronous DRAM
M52D32321A-7.5BG 512K x 32Bit x 2Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M52D32162A-7.5BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M52D32162A-7.5TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M52D32162A-7BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM
M52D32162A-7TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM
M52D32321A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Mobile Synchronous DRAM