參數(shù)資料
型號: M50LPW040N5T
廠商: 意法半導體
英文描述: 4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory
中文描述: 4兆位512KB的× 8,統(tǒng)一座3V電源低引腳數(shù)快閃記憶體
文件頁數(shù): 31/36頁
文件大?。?/td> 272K
代理商: M50LPW040N5T
31/36
M50LPW040
Figure 18. Block Erase Flowchart and Pseudo Code
Note: 1. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
Write 20h
AI04434
Start
Write Block Address
& D0h
Read Status
Register
YES
NO
b7 = 1
YES
NO
b3 = 0
NO
b4, b5 = 0
VPP Invalid
Error (1)
Command
Sequence Error (1)
Block Erase command:
– write 20h
– write Block Address & D0h
(memory enters read Status Register after
the Block Erase command)
do:
– read Status Register
– if Program/Erase Suspend command
given execute suspend erase loop
while b7 = 1
If b3 = 1, VPP invalid error:
– error handler
If b4, b5 = 1, Command sequence error:
– error handler
YES
NO
b5 = 0
Erase Error (1)
YES
NO
Suspend
Suspend
Loop
If b5 = 1, Erase error:
– error handler
End
YES
NO
b1 = 0
Erase to Protected
Block Error (1)
If b1 = 1, Erase to protected block error:
– error handler
YES
LPC
Interface
Only
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