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參數(shù)資料
| 型號： | M50FLW080AN5P |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| 中文描述： | 8兆位（13 × 64KB之座3 × 16 × 4KB的部門），3V電源固件集線器/低引腳數(shù)快閃記憶體 |
| 文件頁數(shù)： | 27/64頁 |
| 文件大?。?/td> | 341K |
| 代理商： | M50FLW080AN5P |
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M50FLW080A, M50FLW080B
Command interface
27/64
4.5
Quadruple Byte Program command (A/A Mux interface)
The Quadruple Byte Program Command is used to program four adjacent Bytes in the
memory array at a time. The four Bytes must differ only for addresses A0 and A1.
Programming should not be attempted when V
PP
is not at V
PPH
.
Five Bus Write operations are required to issue the command. The second, third and fourth
Bus Write cycles latch the respective addresses and data of the first, second and third Bytes
in the Program/Erase Controller. The fifth Bus Write cycle latches the address and data of
the fourth Byte and starts the Program/Erase Controller. Once the command is issued,
subsequent Bus Read operations read the value in the Status Register. (See the section on
the Status Register for details on the definitions of the Status Register bits.)
During the Quadruple Byte Program operation, the memory will only accept the Read Status
Register and Program/Erase Suspend commands. All other commands are ignored.
Note that the Quadruple Byte Program command cannot change a bit set to ‘0’ back to ‘1’
and attempting to do so will not modify its value. One of the erase commands must be used
to set all of the bits in the block to ‘1’.
See
Figure 23
, for a suggested flowchart on using the Quadruple Byte Program command.
Typical Quadruple Byte Program times are given in
Table 18
.
4.6
Double/Quadruple Byte Program command (FWH mode)
The Double/Quadruple Byte Program Command can be used to program two/four adjacent
Bytes to the memory array at a time. The two Bytes must differ only for address A0; the four
Bytes must differ only for addresses A0 and A1.
Two Bus Write operations are required to issue the command. The second Bus Write cycle
latches the start address and two/four data Bytes and starts the Program/Erase Controller.
Once the command is issued, subsequent Bus Read operations read the contents of the
Status Register. (See the section on the Status Register for details on the definitions of the
Status Register bits.)
During the Double/Quadruple Byte Program operation the memory will only accept the Read
Status register and Program/Erase Suspend commands. All other commands are ignored.
Note that the Double/Quadruple Byte Program command cannot change a bit set to ‘0’ back
to ‘1’ and attempting to do so will not modify its value. One of the erase commands must be
used to set all of the bits in the block to ‘1’.
See
Figure 22
, for a suggested flowchart on using the Double/Quadruple Byte Program
command. Typical Double/Quadruple Byte Program times are given in
Table 18
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M50FLW080AN5TP | 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080ANB5P | 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080ANB5TP | 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FW080K5P | 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
| M50FW080K5TP | 8 Mbit 1Mb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M50FLW080AN5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080AN5TG | 功能描述:IC FLASH 8MBIT 33MHZ 40TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| M50FLW080AN5TP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080ANB5 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080ANB5G | 功能描述:閃存 8Mbit 3V Firmwre Hub Low pin-count flash RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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