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參數(shù)資料
| 型號(hào)： | M464S1724FTS-C(L)7A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC |
| 中文描述： | 144Pin支持無緩沖的SODIMM 128Mb的基礎(chǔ)上的F -模的64位非ECC |
| 文件頁數(shù)： | 13/15頁 |
| 文件大?。?/td> | 221K |
| 代理商： | M464S1724FTS-C(L)7A |
64MB, 128MB Unbuffered SODIMM
SDRAM
Rev. 1.4 May 2004
SIMPLIFIED TRUTH TABLE
(V=Valid, X=Don
′
t care, H=Logic high, L=Logic low)
Command
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
BA
0,1
A
10
/AP
A
0
~ A
9,
A
11
Note
Register
Mode register set
H
X
L
L
L
L
X
OP code
1,2
Refresh
Auto refresh
H
H
L
L
L
H
X
X
3
Self
refresh
Entry
L
3
Exit
L
H
L
H
H
H
X
X
3
H
X
X
X
3
Bank active & row addr.
H
X
L
L
H
H
X
V
Row address
Read &
column address
Auto precharge disable
H
X
L
H
L
H
X
V
L
Column
address
4
Auto precharge enable
H
4,5
Write &
column address
Auto precharge disable
H
X
L
H
L
L
X
V
L
Column
address
4
Auto precharge enable
H
4,5
Burst stop
H
X
L
H
H
L
X
X
6
Precharge
Bank selection
H
X
L
L
H
L
X
V
L
X
All banks
X
H
Clock suspend or
active power down
Entry
H
L
H
X
X
X
X
X
L
V
V
V
Exit
L
H
X
X
X
X
X
Precharge power down mode
Entry
H
L
H
X
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
X
L
V
V
V
DQM
H
V
X
7
No operation command
H
X
H
X
X
X
X
X
L
H
H
H
1. OP Code : Operand code
A
0
~ A
11
& BA
0
~ BA
1
: Program keys. (@ MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 clock cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA
0
~ BA
1
: Bank select addresses.
If both BA
0
and BA
1
are "Low" at read, write, row active and precharge, bank A is selected.
If BA
0
is "High" and BA
1
is "Low" at read, write, row active and precharge, bank B is selected.
If BA
0
is "Low" and BA
1
is "High" at read, write, row active and precharge, bank C is selected.
If both BA
0
and BA
1
are "High" at read, write, row active and precharge, bank D is selected.
If A
10
/AP is "High" at row precharge, BA
0
and BA
1
is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at t
RP
after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
Notes :
X
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