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參數(shù)資料
| 型號(hào)： | M464S1654BT1 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| 中文描述： | 16Mx64 SDRAM內(nèi)存的SODIMM在16Mx16顯示，4Banks，8K的刷新，3.3V的同步DRAM的社民黨 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | M464S1654BT1 |
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Input Characteristics
Input voltage V
I
(V)
0
0.4
0.2
0.6
0.8
1.0
0
1
2
3
4
5
I
I
Input Characteristics
Input voltage V
I
(V)
0
2
1
3
4
5
0
2
4
6
8
10
I
I
V
S
= 20V
Ta = 75°C
Ta = 25°C
Ta = –20°C
V
S
= 20V
Ta = 75°C
Ta = 25°C
Ta = –20°C
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| M464S1654ETS | SDRAM Unbuffered SODIMM |
| M464S1724FTS-C(L)7A | 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC |
| M464S3323BN0 | 144pin SDRAM SODIMM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M464S1654BT1-C1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S1654BT1-C1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S1654BT1-L1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S1654BT1-L1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S1654ETS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Unbuffered SODIMM |
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