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參數(shù)資料
| 型號(hào)： | M464S1654BT1 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| 中文描述： | 16Mx64 SDRAM內(nèi)存的SODIMM在16Mx16顯示，4Banks，8K的刷新，3.3V的同步DRAM的社民黨 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | M464S1654BT1 |
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
—
—
—
—
—
—
—
—
I
S (leak) #
I
S
V
F
I
R #
+
: The typical values are those measured under ambient temperature (Ta) of 25
°
C. There is no guarantee that these values are obtained under any
conditions.
# : Unused I/O pins must be connected to GND.
—
5
—
0
2.4
0
V
V
V
50
10
0.2
I
O
0
0
—
—
–350
–100
mA
V
CE (sat)
I
I
100
2.4
2.0
1.0
5.0
15.0
–2.4
100
V
S
= 50V, V
I
= 0.2V
V
S
= 10V, V
I
= 2.4V, I
O
= –350mA
V
S
= 10V, V
I
= 2.4V, I
O
= –100mA
V
I
= 3V
V
I
= 10V
V
S
= 50V, V
I
= 3V (all input)
I
F
= –350mA
V
R
= 50V
Symbol
Unit
Parameter
Test conditions
Limits
typ
+
—
1.6
1.45
0.6
2.9
5.6
–1.2
—
min
max
μ
A
mA
V
μ
A
V
mA
V
S
V
IH
V
IL
min
typ
max
Parameter
Limits
Symbol
Unit
Supply voltage
Output current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
“H” input voltage
“L” input voltage
Duty Cycle
no more than 40%
Duty Cycle
no more than 7%
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Supply leak current
Supply current
Clamping diode forward voltage
Clamping diode reverse current
Collector-emitter saturation voltage
Input current
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
ns
ns
t
on
t
off
—
—
100
4800
—
—
Symbol
Unit
Parameter
Test conditions
Limits
typ
min
max
Turn-on time
Turn-off time
C
L
= 15pF (note 1)
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
ton
50%
50%
50%
50%
toff
INPUT
OUTPUT
PG
50
C
L
R
L
V
S
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
μ
s, tr = 6ns, tf = 6ns, Z
O
= 50
V
I
= 0 to 2.4V
(2) Input-output conditions : R
L
= 30
, V
S
= 10V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
Measured device
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M464S1654BT1-C1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S1654BT1-C1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S1654BT1-L1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S1654BT1-L1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD |
| M464S1654ETS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Unbuffered SODIMM |
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