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參數(shù)資料
| 型號： | M41T315V |
| 廠商： | 意法半導體 |
| 英文描述： | Serial access phantom RTC supervisor |
| 中文描述： | 串行訪問幻像時鐘監(jiān) |
| 文件頁數(shù)： | 21/30頁 |
| 文件大?。?/td> | 178K |
| 代理商： | M41T315V |
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M41T315Y, M41T315V, M41T315W
DC and AC parameters
21/30
Figure 11.
Power down/up mode AC waveforms
Table 10.
Crystal electrical characteristics (externally supplied)
Symbol
Parameter
(1)(2)
1.
These values are externally supplied. STMicroelectronics recommends the KDS DT-38:
1TA/1TC252E127, Tuning Fork Type (thruhole) or the DMX-26S: 1TJS125FH2A212, (SMD) quartz crystal
for industrial temperature operations. KDS can be contacted at kouhou@ kdsj.co.jp or
http://www.kdsj.co.jp for further information on this crystal type.
2.
Load capacitors are integrated within the M41T315Y/V/W. Circuit board layout considerations for the
32.768kHz crystal of minimum trace lengths and isolation from RF generating signals should be taken into
account.
Min
Typ
Max
Unit
f
O
Resonant frequency
32.768
kHz
R
S
Series resistance
60
k
Ω
C
L
Load capacitance
12.5
pF
Table 11.
Power down/up trip points DC characteristics
Parameter
(1)(2)
Symbol
1.
Valid for ambient operating temperature: TA = –40 to 85°C; VCC = 4.5 to 5.5V or 2.7 to 3.6V (except
where noted).
2.
Measured at 25°C.
Min
Max
Unit
t
REC
V
PFD
(max) to CEI low
1.5
2.5
ms
t
F
V
PFD
(max) to V
PFD
(min) V
CC
fall time
300
μs
t
FB
V
PFD
(min) to V
SO
V
CC
fall time
10
μs
t
R
V
PFD
(min) to V
PFD
(max) V
CC
rise time
0
μs
t
PF
CEI high to power-fail
0
μs
t
PD(3)(4)
3.
Measured with load shown in
Figure 10 on page 19
.
4.
Input pulse rise and fall times equal 10ns
CEI propagation delay
M41T315Y
10
ns
M41T315V/W
15
ns
VCC
VBAT 0.2V
VBAT 0.2V
CEI
CEO
tPD
tF
tPF
tR
tREC
tPD
VSO
tFB
VPFD (max)
VPFD (min)
AI04257
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相關代理商/技術參數(shù) |
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