參數(shù)資料
型號(hào): M41T256YMT7E
廠商: 意法半導(dǎo)體
英文描述: 256 Kbit 32K x8 SERIAL RTC
中文描述: 256千位32K的x8串行實(shí)時(shí)時(shí)鐘
文件頁(yè)數(shù): 20/27頁(yè)
文件大小: 185K
代理商: M41T256YMT7E
M41T256Y
20/27
Table 8. DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
A
= –25 to 70°C; V
CC
= 4.5 to 5.5V (except where noted).
2. Outputs deselected.
3. For RST and FT pin (Open Drain).
Table 9. Crystal Electrical Characteristics (Externally Supplied)
Note: 1. STMicroelectronics recommends the KDS DT-38: 1TA/1TC252E127, Tuning Fork Type (thru-hole) or the DMX-26S:
1TJS125FH2A212, (SMD) quartz crystal for industrial temperature operations. KDS can be contacted at kouhou@kdsj.co.jp or ht-
tp://www.kdsj.co.jp for further information on this crystal type.
2. Load capacitors are integrated within the M41T256Y. Circuit board layout considerations for the 32.768kHz crystal of minimum trace
lengths and isolation from RF generating signals should be taken into account.
Sym
Parameter
Test Condition
(1)
Min
Typ
Max
Unit
I
BAT
Battery Current OSC ON
T
A
= 25°C, V
CC
= 0V, V
BAT
= 3.0V
1.5
1.9
μA
Battery Current OSC OFF
1.0
1.4
μA
I
CC1
Supply Current
f = 400kHz
1.4
3.0
mA
I
CC2
Supply Current (Standby)
SCL, SDA = V
CC
– 0.3V
1.0
2.5
mA
I
LI
Input Leakage Current
0V
V
IN
V
CC
±1
μA
I
LO(2)
Output Leakage Current
0V
V
OUT
V
CC
±1
μA
V
IH
Input High Voltage
0.7V
CC
V
CC
+ 0.3
V
V
IHB
Input High Voltage in Battery Back-
up for Tamper Pin
V
BAT
Vdiode
V
BAT
V
V
IL
Input Low Voltage
–0.3
0.3V
CC
V
V
BAT
Battery Voltage
2.5
3.5
V
V
OH
Output High Voltage
V
CC
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 3.0mA
0.4
V
Output Low Voltage (Open Drain)
(3)
I
OL
= 10mA
0.4
V
V
PFD
Power Fail Deselect
4.20
4.50
V
V
SO
Battery Back-up Switchover
V
BAT
V
R
SW
Switch Resistance on Tamper Pin
500
Symbol
Parameter
(1,2)
Typ
Min
Max
Unit
f
0
Resonant Frequency
32.768
kHz
R
S
Series Resistance
35
k
C
L
Load Capacitance
12.5
pF
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