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參數(shù)資料
| 型號： | M41ST95YMH6F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | MMJ IN-LINE COUPLER F/F CROSSP |
| 中文描述： | 5.0或3.0V，512位（64位× 8）串行時鐘（SPI）的靜態(tài)存儲器和NVRAM監(jiān) |
| 文件頁數(shù)： | 27/35頁 |
| 文件大?。?/td> | 545K |
| 代理商： | M41ST95YMH6F |
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M41ST95Y*, M41ST95W
Table 13. DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
A
= –40 to 85°C; V
CC
= 4.5 to 5.5V or 2.7 to 3.6V (except where noted).
2. Measured with V
OUT
and E
CON
open.
3. RSTIN1 and RSTIN2 internally pulled-up to V
CC
through 100K
resistor. WDI internally pulled-down to V
SS
through 100K
resistor.
4. Outputs Deselected.
5. External SRAM must match RTC SUPERVISOR chip V
CC
specification.
6. For rechargeable back-up, V
BAT
(max) may be considered V
CC
.
7. For PFO, F
32k
, and SQW pins (CMOS).
8. Conditioned output (E
CON
) can only sustain CMOS leakage current in the battery back-up mode. Higher leakage currents will re-
duce battery life.
9. For IRQ/FT/OUT, RST pins (Open Drain); if pulled-up to supply other than V
CC
, this supply must be equal to, or less than 3.0V when
V
CC
= 0V (during battery back-up mode).
Sym
Parameter
Test
Condition
(1)
M41ST95Y
M41ST95W
Unit
Min
Typ
Max
Min
Typ
Max
I
BAT(2)
Battery Current OSC
ON
T
A
= 25°C,
V
CC
= 0V,
V
BAT
= 3V
400
550
400
550
nA
Battery Current OSC
OFF
50
50
nA
I
CC1
Supply Current
f = 2MHz
2
2
mA
I
CC2
Supply Current
(Standby)
SCL, SDI =
V
CC
– 0.3V
1.4
1.4
mA
I
LI(3)
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±1
±1
μA
Input Leakage Current
(PFI)
–25
2
25
–25
2
25
nA
I
LO(4)
Output Leakage
Current
0V
≤
V
IN
≤
V
CC
±1
±1
μA
I
OUT1(5)
V
OUT
Current (Active)
V
OUT1
>
V
CC
– 0.3V
175
100
mA
I
OUT2
V
OUT
Current (Battery
Back-up)
V
OUT2
>
V
BAT
– 0.3V
100
100
μA
V
IH
Input High Voltage
0.7V
CC
V
CC
+ 0.3
0.7V
CC
V
CC
+ 0.3
V
V
IL
Input Low Voltage
–0.3
0.3V
CC
–0.3
0.3V
CC
V
V
BAT
Battery Voltage
2.5
3.0
3.5
(6)
2.5
3.0
3.5
(6)
V
V
OH
Output High Voltage
(7)
I
OH
= –1.0mA
2.4
2.4
V
Power Supply Voltage
(Open Drain)
IRQ/FT/OUT,
RST
5.5
3.6
V
V
OHB(8)
V
OH
(Battery Back-up)
I
OUT2
=
–1.0μA
2.5
2.9
3.5
2.5
2.9
3.5
V
V
OL
Output Low Voltage
I
OL
= 3.0mA
0.4
0.4
V
Output Low Voltage
(Open Drain)
(9)
I
OL
= 10mA
0.4
0.4
V
V
PFD
Power Fail Deselect
4.20
4.40
4.50
2.55
2.60
2.70
V
V
PFI
PFI Input Threshold
V
CC
= 5V(Y)
V
CC
= 3V(W)
1.225
1.250
1.275
1.225
1.250
1.275
V
PFI Hysteresis
PFI Rising
20
70
20
70
mV
V
SO
Battery Back-up
Switchover
2.5
2.5
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M41ST95YMH6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5.0 or 3.0V, 512 bit (64 bit X 8) Serial RTC (SPI) SRAM and NVRAM Supervisor |
| M41ST95YMX6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5.0 or 3.0V, 512 bit (64 bit X 8) Serial RTC (SPI) SRAM and NVRAM Supervisor |
| M41ST95YMX6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5.0 or 3.0V, 512 bit (64 bit X 8) Serial RTC (SPI) SRAM and NVRAM Supervisor |
| M41ST95YMX6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5.0 or 3.0V, 512 bit (64 bit X 8) Serial RTC (SPI) SRAM and NVRAM Supervisor |
| M41ST95YMX6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5.0 or 3.0V, 512 bit (64 bit X 8) Serial RTC (SPI) SRAM and NVRAM Supervisor |
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