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參數(shù)資料
| 型號(hào)： | M40Z300WMH6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs |
| 中文描述： | 5V或3V NVRAM中監(jiān)多達(dá)8個(gè)LPSRAMs |
| 文件頁(yè)數(shù)： | 9/21頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | M40Z300WMH6TR |
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M40Z300, M40Z300W
The M40Z300/W only monitors the battery when a
nominal V
CC
is applied to the device. Thus appli-
cations which require extensive durations in the
battery back-up mode should be powered-up peri-
odically (at least once every few months) in order
for this technique to be beneficial. Additionally, if a
battery low is indicated, data integrity should be
verified upon power-up via a checksum or other
technique. The BL pin is an open drain output and
an appropriate pull-up resistor to V
CC
should be
chosen to control the rise time.
V
CC
Noise And Negative Going Transients
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1μF (as shown in
Figure
9.
) is recommended in order to provide the needed
filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below V
SS
by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, STMicroelectronics recom-
mends connecting a schottky diode from V
CC
to
V
SS
(cathode connected to V
CC
, anode to V
SS
).
Schottky diode 1N5817 is recommended for
through hole and MBRS120T3 is recommended
for surface mount.
Figure 9. Supply Voltage Protection
AI00622
VCC
0.1
μ
F
DEVICE
VCC
VSS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M40Z300WMQ6TR | 5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs |
| M41ST84WMQ6F | 3.0/3.3V I2C Serial RTC with Supervisory Functions |
| M41ST84WMQ6TR | 3.0/3.3V I2C Serial RTC with Supervisory Functions |
| M41ST84WMQ6 | 3.0/3.3V I2C Serial RTC with Supervisory Functions |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M40Z300WMQ | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:NVRAM CONTROLLER for up to EIGHT LPSRAM |
| M40Z300WMQ1 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:NVRAM CONTROLLER for up to EIGHT LPSRAM |
| M40Z300WMQ1E | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
| M40Z300WMQ1F | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
| M40Z300WMQ1TR | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs |
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