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參數(shù)資料
| 型號： | M40Z300MH1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NVRAM CONTROLLER for up to EIGHT LPSRAM |
| 中文描述： | NVRAM中多達(dá)8個LPSRAM控制器 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大小： | 128K |
| 代理商： | M40Z300MH1 |
M40Z300, M40Z300W
4/16
DATA RETENTION LIFETIME CALCULATION
Most low power SRAMs on the market today can
be used with the M40Z300/W NVRAM Controller.
There are, however some criteria which should be
used in making the final choice of which SRAM to
use. The SRAM must be designed in a way where
the chip enable input disables all other inputs to
the SRAM. This allows inputs to the M40Z300/W
and SRAMs to be Don’t Care once V
CC
falls below
V
PFD
(min). The SRAM should also guarantee
data retention down to V
CC
= 2.0V. The chip en-
able access time must be sufficient to meet the
system needs with the chip enable propagation
delays included. If the SRAM includes a second
Chip Enable pin (E2), this pin should be tied to
V
OUT
.
If data retention lifetime is a critical parameter for
the system, it is important to review the data reten-
tion current specifications for the particular
SRAMs being evaluated. Most SRAMs specify a
data retention current at 3.0V. Manufacturers gen-
erally specify a typical condition for room temper-
ature along with a worst case condition (generally
at elevated temperatures). The system level re-
quirements will determine the choice of which val-
ue to use. The data retention current value of the
SRAMs can then be added to the I
CCDR
value of
the M40Z300/W to determine the total current re-
quirements for data retention. The available bat-
tery capacity for the SNAPHAT of your choice can
then be divided by this current to determine the
amount of data retention available (see Table 8).
CAUTION
: Take care to avoid inadvertent dis-
charge through V
OUT
and E1
CON
-E4
CON
after bat-
tery has been attached.
For a further more detailed review of lifetime cal-
culations, please see Application Note AN1012.
Table 3. Truth Table
Inputs
Outputs
E
B
A
E1
CON
E2
CON
E3
CON
E4
CON
H
X
X
H
H
H
H
L
L
L
L
H
H
H
L
L
H
H
L
H
H
L
H
L
H
H
L
H
L
H
H
H
H
H
L
Figure 3. AC Testing Load Circuit
AI02393
CL = 50pF
CL includes JIG capacitance
333
DEVICE
UNDER
TEST
1.73V
Table 4. AC Measurement Conditions
Input Rise and Fall Times
≤
5ns
Input Pulse Voltages
0 to 3V
Input and Output Timing Ref. Voltages
1.5V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M40Z300MQ1 | CAP CER 4.7UF 4.0V 20% 0603 SMD |
| M40Z300MQ1TR | NVRAM CONTROLLER for up to EIGHT LPSRAM |
| M41ST85YSH | Shielded Multiconductor Cable; Number of Conductors:4; Conductor Size AWG:22; No. Strands x Strand Size:19 x 34; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Temperature Max:105 C; Voltage Nom.:300V RoHS Compliant: Yes |
| M41ST85WMX6 | DIODE SCHOTTKY 25V 10A D2-PAK |
| M41ST85WSH | 5.0 OR 3.0V, 512 bit 64 x 8 SERIAL RTC and NVRAM SUPERVISOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M40Z300MH1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
| M40Z300MH1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
| M40Z300MH1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs |
| M40Z300MH6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
| M40Z300MH6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
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