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參數(shù)資料
| 型號： | M40Z300MH1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NVRAM CONTROLLER for up to EIGHT LPSRAM |
| 中文描述： | NVRAM中多達(dá)8個LPSRAM控制器 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 128K |
| 代理商： | M40Z300MH1 |
M40Z300, M40Z300W
10/16
V
CC
NOISE AND NEGATIVE GOING TRANSIENTS
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy, which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur.
A ceramic bypass capacitor value of 0.1μF (as
shown in figure 8) is recommended in order to pro-
vide the needed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below V
SS
by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, STMicroelectronics recom-
mends connecting a schottky diode from V
CC
to
V
SS
(cathode connected to V
CC
, anode to V
SS
).
Schottky diode 1N5817 is recommended for
through hole and MBRS120T3 is recommended
for surface mount.
Figure 7. Address-Decode Time
Note: During system design, compliance with the SRAM timing parameters must comprehend the propagation delay
between E and EX
CON
AI02551
A, B
E
E1CON-E4CON
tAS
tEDH or tEDL
tEDL
Figure 8. Supply Voltage Protection
AI00622
VCC
0.1
μ
F
DEVICE
VCC
VSS
Table 8. Battery Table
Part Number
Description
Package
M4Z28-BR00SH
Lithium Battery (48mAh) SNAPHAT
SH
M4Z32-BR00SH
Lithium Battery (120mAh) SNAPHAT
SH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M40Z300MQ1 | CAP CER 4.7UF 4.0V 20% 0603 SMD |
| M40Z300MQ1TR | NVRAM CONTROLLER for up to EIGHT LPSRAM |
| M41ST85YSH | Shielded Multiconductor Cable; Number of Conductors:4; Conductor Size AWG:22; No. Strands x Strand Size:19 x 34; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Temperature Max:105 C; Voltage Nom.:300V RoHS Compliant: Yes |
| M41ST85WMX6 | DIODE SCHOTTKY 25V 10A D2-PAK |
| M41ST85WSH | 5.0 OR 3.0V, 512 bit 64 x 8 SERIAL RTC and NVRAM SUPERVISOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M40Z300MH1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
| M40Z300MH1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
| M40Z300MH1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs |
| M40Z300MH6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
| M40Z300MH6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to 8 LPSRAMs |
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