參數(shù)資料
型號(hào): M390S6450CT1
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD
中文描述: 64Mx72 SDRAM的內(nèi)存與鎖相環(huán)
文件頁數(shù): 6/12頁
文件大?。?/td> 220K
代理商: M390S6450CT1
M390S6450CT1
PC133 Registered DIMM
Rev. 0.2 Sept. 2001
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
Unit
Note
-7C
-7A
Operating current
(One bank active)
I
CC1
Burst length =1
t
RC
t
RC
(min)
I
O
= 0 mA
2300
2120
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
V
IL
(max), t
CC
= 10ns
386
mA
3
I
CC2
PS
CKE & CLK
V
IL
(max), t
CC
=
38
Precharge standby current in
non power-down mode
I
CC2
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
710
mA
3
I
CC2
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
182
Active standby current in
power-down mode
I
CC3
P
CKE
V
IL
(max), t
CC
= 10ns
458
mA
3
I
CC3
PS
CKE & CLK
V
IL
(max), t
CC
=
110
Active standby current in
non power-down mode
I
CC3
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
890
mA
3
I
CC3
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
452
mA
3
Operating current
(Burst mode)
I
CC4
I
O
= 0mA
Page Burst
4 Banks activated
t
CCD
=2CLK
2480
2480
mA
1
Refresh current
I
CC5
t
RC
t
RC
(min)
4460
4100
mA
2
Self refresh current
I
CC6
CKE
0.2V
404
mA
3
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Measured with 1 PLL & 3 Drive ICs.
4. Unless otherwise noted, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
)
Notes :
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