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參數(shù)資料
| 型號(hào)： | M390S6450CT1-C7C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD |
| 中文描述： | 64Mx72 SDRAM的內(nèi)存與鎖相環(huán) |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 220K |
| 代理商： | M390S6450CT1-C7C |
M390S6450CT1
PC133 Registered DIMM
Rev. 0.2 Sept. 2001
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
18
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
3.0
3.3
3.6
V
Input high voltage
V
IH
2.0
3.0
V
DDQ
+0.3
V
1
Input low voltage
V
IL
-0.3
0
0.8
V
2
Output high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
I
LI
-10
-
10
uA
3
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
=1.4V
±
200
mV)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A
0
~ A
12
)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0)
Input capacitance (CLK0)
Input capacitance (CS0, CS2)
Input capacitance (DQM0 ~ DQM7)
Input capacitance (BA0 ~ BA1)
Data input/output capacitance (DQ0 ~ DQ63)
Data input/output capacitance (CB0 ~ CB7)
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
IN7
C
OUT
C
OUT
1
-
-
-
-
-
-
-
-
-
15
15
15
20
15
15
15
16
16
pF
pF
pF
pF
pF
pF
pF
pF
pF
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :
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