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| 型號： | M38B79MFH-A154FP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
| 中文描述： | 單芯片8位CMOS微機 |
| 文件頁數(shù)： | 74/109頁 |
| 文件大?。?/td> | 1559K |
| 代理商： | M38B79MFH-A154FP |
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38B7 Group
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
MITSUBISHI MICROCOMPUTERS
PRELIMINARY
Notice: This is not a final specification.
change.
Some parametric limits are subject to
74
MASK OPTION OF PULL-DOWN RESISTOR
(object product: mask ROM version)
Whether built-in pull-down resistors are connected or not to high-
breakdown voltage ports P4
0
to P4
7
, P5
0
to P5
7
, and P6
0
to P6
3
can be specified in ordering mask ROM. The option type can be
specified from among 7 types; A to G.
Notes 1:
The electrical characteristics of high-breakdown voltage ports P4
0
to P4
7
, P5
0
to P5
7
, and P6
0
to P6
3
’s built-in pull-down resistors
are the same as that of high-breakdown voltage ports P0
0
to P0
7
.
2:
The absolute maximum ratings of power dissipation may be exceed owing to the number of built-in pull-down resistor. After calcu-
lating the power dissipation, specify the option type.
3:
The flash memory version cannot select whether built-in pull-down resistors are connected or not. This is the same as option type A.
4:
Since mask options B to G are under development now, they cannot be specified.
Power Dissipation Calculating Method
(Fixed number depending on microcomputer’s standard)
V
OH
output fall voltage of high-breakdown port
2 V (max.); | Current value | = at 18 mA
Resistor value = 48 k
(min.)
Power dissipation of internal circuit (CPU, ROM, RAM etc.)
= 5 V
15 mA = 75 mW
(
Fixed number depending on use condition)
Apply voltage to V
EE
pin: Vcc – 45 V
Timing number a; digit number b; segment number c
Ratio of Toff time corresponding Tdisp time: 1/16
Turn ON segment number during repeat cycle: d
All segment number during repeat cycle: e (= a
c)
Total number of built-in resistor: for digit, f; for segment, g
Digit pin current value h (mA)
Segment pin current value i (mA)
A
B
C
D
E
F
G
P
4
0
P
4
1
P
4
2
P4
3
P4
4
P
4
5
P
4
6
P
4
7
P5
0
P
5
1
P
5
2
P5
3
P
5
4
P
5
5
P5
6
P
5
7
P
6
0
P
6
1
P
6
2
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
P6
3
0
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
(1) Digit pin power dissipation
{h
b
(1
–
Toff / Tdisp)
voltage} / a
(2) Segment pin power dissipation
{i
d
(1
–
Toff / Tdisp)
voltage} / a
(3) Pull-down resistor power dissipation (digit)
{power dissipation per 1 digit
(b
f / b)
(1
–
Toff / Tdisp) } / a
(4) Pull-down resistor power dissipation (segment)
{power dissipation per 1 segment
(d
g / c)
(1
–
Toff /
Tdisp) } / a
(5) Internal circuit power dissipation (CPU, ROM, RAM etc.)
= 190 mW
(1) + (2)+ (3) + (4) + (5) = X mW
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