參數(shù)資料
型號： M36WT864BFZA
廠商： 意法半導體
英文描述： 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述： 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多
文件頁數(shù)： 89/92頁
文件大?。?/td> 624K
代理商： M36WT864BFZA
89/92
M36WT864TF, M36WT864BF
Table 45. Command Interface States - Modify Table, Next Output
Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Fac-
tory Program, DWP = Double Word Program, QWP = Quadruple Word Program, P/E. C. = Program/Erase Controller.
2. At Power-Up, all banks are in Read Array mode. A Read Array command issued to a busy bank, results in undetermined data out-
put.
3. The two cycle command should be issued to the same bank address.
4. If the P/E.C. is active, both cycles are ignored.
5. The Clear Status Register command clears the Status Register error bits except when the P/E.C. is busy or suspended.
6. The output state shows the type of data that appears at the outputs if the bank address is the same as the command address. A
bank can be placed in Read Array, Read Status Register, Read Electronic Signature or Read CFI Query mode, depending on the
command issued. Each bank remains in its last output state until a new command is issued. The next state does not depend on the
bank’s output state.
Current CI State
Next Output State After Command Input (6)
Erase
Confirm
P/E
Resume,
Block
Unlock
confirm,
EFP
Confirm
Read
Array
(2)
Program
DWP,
QWP
Setup
(3,4)
Block
Erase,
Bank
Erase
Setup
(3,4)
EFP
Setup
Quad-
EFP
Setup
Program/
Erase
Suspend
Read
Status
Register
Clear status
Register
(5)
Read
Electronic
signature,
Read CFI
Query
Program Setup
Erase Setup
OTP Setup
Program in
Erase Suspend
EFP Setup
EFP Busy
EFP Verify
Quad EFP Setup
Quad EFP Busy
Lock/CR Setup
Lock/CR Setup
in Erase
Suspend
Status Register
Status Register
OTP Busy
Array
Status Register
Output Unchanged
Status
Register
Output
Unchanged
Status
Register
Ready
Array
Status Register
Output Unchanged
Status
Register
Output
Unchanged
Electronic
Signature/
CFI
Program Busy
Erase Busy
Program/Erase
Program in
Erase Suspend
Busy
Program in
Erase Suspend
Suspended
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相關代理商/技術參數(shù)
參數(shù)描述
M36WT864T10ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T70ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T85ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TF70ZA6T 功能描述:組合存儲器 64M (4Mx16) 70ns RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray
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