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參數(shù)資料
| 型號(hào)： | M36WT864BFZA |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| 中文描述： | 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多 |
| 文件頁數(shù)： | 73/92頁 |
| 文件大?。?/td> | 624K |
| 代理商： | M36WT864BFZA |
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M36WT864TF, M36WT864BF
Table 42. Bank and Erase Block Region 1 Information
M36WT864TF (top)
M36WT864BF (bottom)
Description
Offset
Data
Offset
Data
(P+19)h =52h
0Fh
(P+19)h =52h
01h
Number of identical banks within Bank Region 1
(P+1A)h =53h
00h
(P+1A)h =53h
00h
(P+1B)h =54h
11h
(P+1B)h =54h
11h
Number of program or erase operations allowed in region 1:
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+1C)h =55h
00h
(P+1C)h =55h
00h
Number of program or erase operations allowed in other banks
while a bank in same region is programming
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+1D)h =56h
00h
(P+1D)h =56h
00h
Number of program or erase operations allowed in other banks
while a bank in this region is erasing
Bits 0-3: Number of simultaneous program operations
Bits 4-7: Number of simultaneous erase operations
(P+1E)h =57h
01h
(P+1E)h =57h
02h
Types of erase block regions in region 1
n = number of erase block regions with contiguous same-size
erase blocks.
Symmetrically blocked banks have one blocking region.
(2)
(P+1F)h =58h
07h
(P+1F)h =58h
07h
Bank Region 1 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
(P+20)h =59h
00h
(P+20)h =59h
00h
(P+21)h =5Ah
00h
(P+21)h =5Ah
20h
(P+22)h =5Bh
01h
(P+22)h =5Bh
00h
(P+23)h =5Ch
64h
(P+23)h =5Ch
64h
Bank Region 1 (Erase Block Type 1)
Minimum block erase cycles × 1000
(P+24)h =5Dh
00h
(P+24)h =5Dh
00h
(P+25)h =5Eh
01h
(P+25)h =5Eh
01h
Bank Region 1 (Erase Block Type 1): BIts per cell, internal
ECC
Bits 0-3: bits per cell in erase region
Bit 4: reserved for “internal ECC used”
BIts 5-7: reserved 5Eh 01 5Eh 01
(P+26)h =5Fh
03h
(P+26)h =5Fh
03h
Bank Region 1 (Erase Block Type 1): Page mode and
synchronous mode capabilities
Bit 0: Page-mode reads permitted
Bit 1: Synchronous reads permitted
Bit 2: Synchronous writes permitted
Bits 3-7: reserved
(P+27)h =60h
06h
Bank Region 1 Erase Block Type 2 Information
Bits 0-15: n+1 = number of identical-sized erase blocks
Bits 16-31: n×256 = number of bytes in erase block region
(P+28)h =61h
00h
(P+29)h =62h
00h
(P+2A)h =63h
01h
(P+2B)h =64h
64h
Bank Region 1 (Erase Block Type 2)
Minimum block erase cycles × 1000
(P+2C)h =65h
00h
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36WT864T10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864T85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864TF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WT864TF70ZA6T | 功能描述:組合存儲(chǔ)器 64M (4Mx16) 70ns RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
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