參數(shù)資料
型號(hào)： M36W832Te70ZA1S
廠(chǎng)商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，引導(dǎo)塊閃存和8兆位的SRAM 512KB的x16，內(nèi)存產(chǎn)品多
文件頁(yè)數(shù)： 63/64頁(yè)
文件大?。?/td> 897K
代理商： M36W832TE70ZA1S
63/64
M36W832TE, M36W832BE
REVISION HISTORY
Table 36. Document Revision History
Date
Version
Revision Details
16-Jul-2002
1.0
First Issue
29-Nov-2002
2.0
Revision History moved to end of document. Flash and SRAM components updated.
Table 2, Main Operation Modes, modified.
Flash Device: “Quadruple Word Program Command” added, “Double Word Program
Command” clarified, V
DDQF
Maximum changed to 3.6V, Corrections to Table 8, Flash
Program, Erase Times and Program/Erase Endurance Cycles, Table 15, DC
Characteristicss Table and to CFI Tables 30 and 31. Security block removed.
Command Codes Table added, DQ0, DQ2, DQ3-DQ7 and DQ8-DQ15 parameters
modified for Lock in Table 7, Flash Read Protection Register and Lock Register.
70ns Speed Class added. 100ns Speed Class removed.
SRAM device: “Data Retention” on Page 25 and SRAM read and write AC
characteristics (Figures 14, 15, 16, 17, 18, 19, 20, 21 and 22) modified. Figure 7,
SRAM Block Diagram, added.
24-Mar-2003
3.0
Document promoted to full Datasheet status. Minor corrections to SRAM Block
Diagram. Input Rise and Fall Time for 70ns speed class modified in Operating and AC
Measurement Conditions Table. LFBGA Connections and Daisy Chain pin numbers
modified.
26-May-2003
3.1
Special tape option added to ordering information scheme
相關(guān)PDF資料
PDF描述
M36W832Te70ZA1T 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832Te70ZA6S 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832Te70ZA6T 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832Te85ZA6S 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832Te85ZA6T 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36W832TE70ZA1T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE70ZA6S 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE70ZA6T 功能描述:閃存 32M (2Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36W832TE85ZA1S 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE85ZA1T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
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