參數(shù)資料
型號: M36W0R6050B1ZAQF
廠商: 意法半導體
英文描述: 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
中文描述: 64兆位(4兆】16日,多銀行,突發(fā))閃存和32兆位(2字節(jié)】16)移動存儲芯片,多芯片封裝
文件頁數(shù): 20/22頁
文件大小: 159K
代理商: M36W0R6050B1ZAQF
Part numbering
M36W0R6050T1, M36W0R6050B1
20/22
7
Part numbering
Table 7.
Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of
available options (Speed, Package, etc.) or for further information on any aspect of this
device, please contact the STMicroelectronics Sales Office nearest to you.
Ordering information scheme
Example:
M36 W0 R 6 0 5 0 T 1 ZAQ E
Device Type
M36 = Multiple Memory Product (Multiple Flash + RAM)
Flash 1 Architecture
W = Multiple Bank, Burst mode
Flash 2 Architecture
0 = none present
Operating Voltage
R = V
DDF
= V
DDQF
= V
DDP
= 1.7 V to 1.95 V
Flash 1 Density
6 = 64 Mbit
Flash 2 Density
0 = none present
RAM 1 Density
5 = 32 Mbit
RAM 0 Density
0 = none present
Parameter Blocks Location
T = Top Boot Block Flash
B = Bottom Boot Block Flash
Product Version
1 = 90 nm Flash technology, 70 ns; 0.13 μm RAM, 70 ns speed
Package
ZAQ = Stacked TFBGA88 8 × 10 mm - 8 × 10 active ball array, 0.8 mm pitch
Option
E = ECOPACK Package, Standard Packing
F = ECOPACK Package, Tape & Reel Packing
相關PDF資料
PDF描述
M36W0R6050T1 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
M36W0R6050T1ZAQE 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
M36W0R6050T1ZAQF 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
M39432 Single Chip 4Mbit Flash and 256Kbit Parallel EEPROM Memory(單片4Mb閃速和256Kb并行EEPROM)
M40Z111MH6 5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
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