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參數(shù)資料
| 型號： | M36W0R6050B1ZAQF |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| 中文描述： | 64兆位（4兆】16日，多銀行，突發(fā)）閃存和32兆位（2字節(jié)】16）移動存儲芯片，多芯片封裝 |
| 文件頁數(shù)： | 12/22頁 |
| 文件大?。?/td> | 159K |
| 代理商： | M36W0R6050B1ZAQF |
Signal descriptions
M36W0R6050T1, M36W0R6050B1
12/22
2.20
V
PPF
program supply voltage
V
PPF
is both a Flash Memory control input and a Flash Memory power supply pin. The two
functions are selected by the voltage range applied to the pin.
If V
PPF
is kept in a low voltage range (0V to V
DDQF
) V
PPF
is seen as a control input. In this
case a voltage lower than V
PPLKF
gives an absolute protection against Program or Erase,
while V
PPF
> V
PP1F
enables these functions (see the M58WR064HT/B datasheet for the
relevant values). V
PPF
is only sampled at the beginning of a Program or Erase; a change in
its value after the operation has started does not have any effect and Program or Erase
operations continue.
If V
PPF
is in the range of V
PPHF
it acts as a power supply pin. In this condition V
PPF
must be
stable until the Program/Erase algorithm is completed.
2.21
V
SS
ground
V
SS
is the common ground reference for all voltage measurements in the Flash memory
(core and I/O Buffers) and PSRAM components.
Note:
Each Flash memory device in a system should have its supply voltages (V
DDF
, V
DDQF
) and
the program supply voltage V
PPF
decoupled with a 0.1μF ceramic capacitor close to the pin
(high frequency, inherently low inductance capacitors should be as close as possible to the
package). See
Figure 5: AC measurement load circuit
. The PCB track widths should be
sufficient to carry the required V
PPF
program and erase currents.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W0R6050T1 | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| M36W0R6050T1ZAQE | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| M36W0R6050T1ZAQF | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
| M39432 | Single Chip 4Mbit Flash and 256Kbit Parallel EEPROM Memory(單片4Mb閃速和256Kb并行EEPROM) |
| M40Z111MH6 | 5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W0R6050B3 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP |
| M36W0R6050B3ZAQE | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP |
| M36W0R6050B3ZAQF | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP |
| M36W0R6050B4ZAQE | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH PSRAM 96M |
| M36W0R6050B4ZAQF | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
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