- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄377825 > M36W0R6030B0ZAQ (意法半導(dǎo)體) 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package PDF資料下載
參數(shù)資料
| 型號(hào)： | M36W0R6030B0ZAQ |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| 中文描述： | 64兆位（4Mb的x16插槽，多銀行，突發(fā)）閃存和8兆位（512KB的× 16）的SRAM，多芯片封裝 |
| 文件頁(yè)數(shù)： | 12/26頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | M36W0R6030B0ZAQ |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)當(dāng)前第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)
M36W0R6030T0, M36W0R6030B0
12/26
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 3. Absolute Maximum Ratings
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK
7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
Symbol
Parameter
Value
Unit
Min
Max
T
A
Ambient Operating Temperature
–40
85
°C
T
BIAS
Temperature Under Bias
–40
125
°C
T
STG
Storage Temperature
–65
155
°C
T
LEAD
Lead Temperature during Soldering
(1)
°C
V
IO
Input or Output Voltage
–0.5
V
DDQ
+0.6
V
V
DDF
Flash Memory Core Supply Voltage
–0.2
2.45
V
V
DDQ
Input/Output Supply Voltage
–0.2
2.45
V
V
DDS
SRAM Supply Voltage
–0.2
2.4
V
V
PPF
Flash Memory Program Voltage
–0.2
14
V
I
O
Output Short Circuit Current
100
mA
t
VPPFH
Time for V
PPF
at V
PPFH
100
hours
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W0R6030B0ZAQE | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQF | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQT | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0 | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQ | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W0R6030B0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQ | 制造商:Micron Technology Inc 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。