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參數(shù)資料
| 型號： | M36LLR876B0E |
| 廠商： | 意法半導體 |
| 英文描述： | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| 中文描述： | 256 128兆位（多銀行，多層次，突發(fā)）64兆位閃存（突發(fā)）移動存儲芯片，1.8V電源，多芯片封裝 |
| 文件頁數(shù)： | 11/19頁 |
| 文件大?。?/td> | 427K |
| 代理商： | M36LLR876B0E |
11/19
M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 3. Absolute Maximum Ratings
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK 7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
Symbol
Parameter
Value
Unit
Min
Max
T
A
Ambient Operating Temperature
–25
85
°C
T
BIAS
Temperature Under Bias
–25
85
°C
T
STG
Storage Temperature
–65
125
°C
T
LEAD
Lead Temperature During Soldering
(1)
°C
V
IO
Input or Output Voltage
–0.5
3.6
V
V
DDF1
, V
DDF2
,
V
DDQF
, V
CCP
Core and Input/Output Supply Voltages
–0.2
2.45
V
V
PPF
Flash Program Voltage
–0.2
12.6
V
I
O
Output Short Circuit Current
100
mA
t
VPPFH
Time for V
PPF
at V
PPFH
100
hours
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