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參數(shù)資料
| 型號(hào)： | M36LLR8760M1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| 中文描述： | 256 128兆位（多銀行，多層次，突發(fā)）64兆位閃存（突發(fā)）移動(dòng)存儲(chǔ)芯片，1.8V電源，多芯片封裝 |
| 文件頁(yè)數(shù)： | 17/19頁(yè) |
| 文件大小： | 427K |
| 代理商： | M36LLR8760M1 |
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M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1
PART NUMBERING
Table 11. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available op-
tions (Speed, Package, etc.) or for further information on any aspect of this device, please contact the ST-
Microelectronics Sales Office nearest to you.
Example:
M36 L
L
R 8
7 6
0
T
1 ZAQ T
Device Type
M36 = Multi-Chip Package (Multiple Flash + RAM)
Flash 1 Architecture
L = Multi-Level, Multiple Bank, Burst mode
Flash 2 Architecture
L = Multi-Level, Multiple Bank, Burst mode
Operating Voltage
R = V
DDF
= V
CCP
= V
DDQF
= 1.7 to 1.95V
Flash 1 Density
8 = 256 Mbits
Flash 2 Density
7 = 128 Mbits
RAM 1 Density
6 = 64 Mbits
RAM 0 Density
0 = No Die
Parameter Blocks Location
T = Top Boot Block Flash
B = Bottom Boot Block Flash
D = Mixed (Flash 1 Bottom, Flash 2 Top)
M = Mixed (Flash 1 Top, Flash 2 Bottom)
Product Version
1 = 0.13μm Flash technology (2 Chip Enable inputs, one for each Flash memory), 85ns speed;
0.11μm PSRAM, 70ns speed, burst mode
Package
ZAQ = Stacked LFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch
Option
Blank = Standard Packing
T = Tape & Reel Packing
E = Lead-free and RoHS Standard packing
F = Lead-free and RoHS Tape & Reel packing
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36LLR8760T | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760T1 | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760TT | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760D | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR876B0 | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36LLR8760T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760T1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760TT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR876B0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR876B0E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
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