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參數(shù)資料
| 型號(hào)： | M36LLR8760M1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| 中文描述： | 256 128兆位（多銀行，多層次，突發(fā)）64兆位閃存（突發(fā)）移動(dòng)存儲(chǔ)芯片，1.8V電源，多芯片封裝 |
| 文件頁(yè)數(shù)： | 15/19頁(yè) |
| 文件大?。?/td> | 427K |
| 代理商： | M36LLR8760M1 |
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M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1
Table 8. Flash 1 and Flash 2 DC Characteristics - Voltages
Table 9. PSRAM DC Characteristics
Note: 1. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the current required to
drive the output capacitance expected in the actual system.
2. I
SB
(Max) values are measured with RCR2 to RCR0 bits set to ‘000’ (full array refresh) and RCR6 to RCR5 bits set to ‘11’ (temper-
ature compensated refresh threshold at +85°C). In order to achieve low standby current, all inputs must be driven either to V
CCQ
or V
SS
.
3. The Operating Temperature is +25°C.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
V
IL
Input Low Voltage
0
0.4
V
V
IH
Input High Voltage
V
DDQF
–
0.4
V
DDQF
+
0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
I
OH
= –100μA
V
DDQF
–
0.1
V
V
PP1
V
PPF
Program Voltage-Logic
Program, Erase
1.1
1.8
3.3
V
V
PPH
V
PPF
Program Voltage Factory
Program, Erase
8.5
9.0
9.5
V
V
PPLK
Program or Erase Lockout
0.4
V
V
LKO
V
DDF1/F2
Lock Voltage
1
V
V
RPH
RP
F
pin Extended High Voltage
3.3
V
Symbo
l
Parameter
Test Condition
Min.
Typ
Max.
Uni
t
I
CC1 (1)
Operating Current: Asynchronous Random
Read/Write
V
CC
=V
IH
or V
IL
,
E = V
IL
,
I
OUT
= 0mA
70ns
25
mA
I
CC1P
(1)
Operating Current: Asynchronous Page Read
70ns
15
mA
I
CC2 (1)
Operating Current:
Initial Access, Burst Read/Write
80MHz
35
mA
66MHz
30
mA
I
CC3R(1)
Operating Current:
Continuous Burst Read
80MHz
18
mA
66MHz
15
mA
I
CC3W(1
)
Operating Current:
Continuous Burst Write
80MHz
35
mA
66MHz
30
mA
I
SB(2)
V
CC
Standby Current
V
CC
= V
CCQ
or 0V,
E = V
IH
120
μA
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
1
μA
I
LO
Output Leakage Current
G = V
IH
or E = V
IH
1
μA
I
ZZ
Deep-Power Down Current
V
IN
= V
IH
or V
IL
10
μA
V
IH
Input High Voltage
1.4
V
CCQ
+
0.2
V
V
IL
Input Low Voltage
0.2
0.4
V
V
OH
Output High Voltage
I
OH
=
0.2mA
0.8V
CC
Q
V
V
OL
Output Low Voltage
I
OL
= 0.2mA
0.2V
CCQ
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36LLR8760T | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760T1 | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760TT | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760D | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR876B0 | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36LLR8760T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760T1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760TT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR876B0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR876B0E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
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