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參數(shù)資料
| 型號： | M36LLR8760D1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| 中文描述： | 256 128兆位（多銀行，多層次，突發(fā)）64兆位閃存（突發(fā)）移動存儲芯片，1.8V電源，多芯片封裝 |
| 文件頁數(shù)： | 10/19頁 |
| 文件大?。?/td> | 427K |
| 代理商： | M36LLR8760D1 |
M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1
10/19
Table 2. Main Operating Modes
Note: 1. X = Don't care.
2. L
F
can be tied to V
IH
if the valid address has been previously latched.
3. Depends on G
F
.
4. WAIT signal polarity is configured using the Set Configuration Register command. See the M30L0R8000(T/B)0 and
M30L0R8000(T/B)0 datasheets for details.
5. E
F
is either E
F1
or E
F2
, and G
F
is either G
F1
or G
F2
according to the Flash memory enabled. Only one Flash memory can be enabled
at a time.
Operation
E
F(5)
G
F
(5)
W
F
L
F
RP
F
WAIT
F(4)
E
P
CR
P
G
P
W
P
LB
P
,UB
P
DQ15-DQ0
Flash Read
V
IL
V
IL
V
IH
V
IL(2)
V
IH
PSRAM must be disabled.
Only one Flash memory can be
enabled at a time.
Flash Data Out
Flash Write
V
IL
V
IH
V
IL
V
IL(2)
V
IH
Flash Data In
Flash Address
Latch
V
IL
X
V
IH
V
IL
V
IH
Flash Data Out
or Hi-Z
(3)
Flash Output
Disable
V
IL
V
IH
V
IH
X
V
IH
Any PSRAM mode is allowed.
Both Flash memories must be
disabled.
Hi-Z
Flash Standby
V
IH
X
X
X
V
IH
Hi-Z
Hi-Z
Flash Reset
X
X
X
X
V
IL
Hi-Z
Hi-Z
PSRAM Read
Both Flash memories must be disabled
V
IL
V
IL
V
IL
V
IH
V
IL
PSRAM data
out
PSRAM Write
V
IL
V
IL
X
V
IL
V
IL
PSRAM data in
PSRAM Write
Configuration
Register
V
IL
V
IH
V
IH
V
IL
X
PSRAM data in
PSRAM
Standby
Any Flash memory mode is allowed. Only
one Flash memory can be enabled at a time
V
IH
V
IL
X
X
X
Hi-Z
PSRAM Deep
Power-Down
V
IH
X
X
X
X
Hi-Z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36LLR8760DF | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760M | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760M1 | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760T | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760T1 | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36LLR8760DF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760M | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760M1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760T1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
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