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參數(shù)資料
| 型號(hào)： | M36LLR8760M |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| 中文描述： | 256 128兆位（多銀行，多層次，突發(fā)）64兆位閃存（突發(fā)）移動(dòng)存儲(chǔ)芯片，1.8V電源，多芯片封裝 |
| 文件頁(yè)數(shù)： | 1/19頁(yè) |
| 文件大小： | 427K |
| 代理商： | M36LLR8760M |
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TARGET SPECIFICATION
July 2005
This is preliminary information on a new product forseen to be developed. Details are subject to change without notice.
M36LLR8760T1, M36LLR8760D1
M36LLR8760M1, M36LLR8760B1
256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory
64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
FEATURES SUMMARY
■
MULTI-CHIP PACKAGE
–
1 die of 256 Mbit (16Mb x16, Multiple
Bank, Multi-level, Burst) Flash Memory
–
1 die of 128 Mbit (8Mb x16, Multiple Bank,
Multi-Level, Burst) Flash Memory
–
1 die of 64 Mbit (4Mb x16) Pseudo SRAM
SUPPLY VOLTAGE
–
V
DDF1
= V
DDF2
= V
CCP
= V
DDQF
= 1.7 to
1.95V
–
V
PPF
= 9V for fast program (12V tolerant)
ELECTRONIC SIGNATURE
–
Manufacturer Code: 20h
–
Top Configuration (Top + Top)
M36LLR8760T1: 880Dh + 88C4h
–
Mixed Configuration (Bottom + Top)
M36LLR8760D1: 880Eh + 88C4h
–
Mixed Configuration (Top + Bottom)
M36LLR8760M1: 880Dh + 88C5h
–
Bottom Configuration (Bottom + Bottom)
M36LLR8760B1: 880Eh + 88C5h
PACKAGE
–
Compliant with Lead-Free Soldering
Processes
–
Lead-Free Versions
■
■
■
FLASH MEMORIES
■
SYNCHRONOUS / ASYNCHRONOUS READ
–
Synchronous Burst Read mode: 54MHz
–
Asynchronous Page Read mode
–
Random Access: 85ns
SYNCHRONOUS BURST READ SUSPEND
PROGRAMMING TIME
–
10μs typical Word program time using
Buffer Enhanced Factory Program
command
MEMORY ORGANIZATION
–
Multiple Bank Memory Array:
16 Mbit Banks for the 256 Mbit Memory
8 Mbit Banks for the 128 Mbit Memory
–
Parameter Blocks (at Top or Bottom)
■
■
■
Figure 1. Package
■
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
DUAL OPERATIONS
–
program/erase in one Bank while read in
others
–
No delay between read and write
operations
SECURITY
–
64 bit unique device number
–
2112 bit user programmable OTP Cells
BLOCK LOCKING
–
All blocks locked at power-up
–
Any combination of blocks can be locked
with zero latency
–
WP
F
for Block Lock-Down
–
Absolute Write Protection with V
PPF
= V
SS
■
■
■
■
PSRAM
■
ACCESS TIME: 70ns
ASYNCHRONOUS PAGE READ
–
Page Size: 16 words
–
Subsequent read within page: 20ns
LOW POWER FEATURES
–
Temperature Compensated Refresh
(TCR)
–
Partial Array Refresh (PAR)
–
Deep Power-Down (DPD) Mode
SYNCHRONOUS BURST READ/WRITE
■
■
■
LFBGA88 (ZAQ)
8 x 10mm
FBGA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36LLR8760M1 | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760T | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760T1 | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760TT | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760D | 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36LLR8760M1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760T1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR8760TT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
| M36LLR876B0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
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