參數(shù)資料
型號(hào)： M36D0R6040T0ZAIE
廠商： 意法半導(dǎo)體
元件分類(lèi)： 圓形連接器
英文描述： Circular Connector; No. of Contacts:26; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:16-26 RoHS Compliant: No
中文描述： 64兆位（4Mb的x16插槽，多銀行，頁(yè)）閃存和16兆位（最快1Mb × 16）移動(dòng)存儲(chǔ)芯片，多芯片封裝
文件頁(yè)數(shù)： 4/18頁(yè)
文件大小： 329K
代理商： M36D0R6040T0ZAIE
M36D0R6040T0, M36D0R6040B0
4/18
SUMMARY DESCRIPTION
The M36D0R6040T0 and M36D0R6040B0 com-
bine two memory devices in a Multi-Chip Package:
a 64-Mbit, Multiple Bank Flash memory, the
M58WR064FT/B, and a 16-Mbit Pseudo SRAM,
the M69AR024B. Recommended operating condi-
tions do not allow more than one memory to be ac-
tive at the same time.
The memory is offered in a Stacked TFBGA67
(12 x 8mm, 8x8 ball array, 0.8mm pitch) package.
In addition to the standard version, the packages
are also available in Lead-free version, in compli-
ance with JEDEC Std J-STD-020B, the ST ECO-
PACK 7191395 Specification, and the RoHS
(Restriction of Hazardous Substances) directive.
All packages are compliant with Lead-free solder-
ing processes.
The memory is supplied with all the bits erased
(set to ‘1’).
Figure 2. Logic Diagram
Table 1. Signal Names
AI09200
22
A0-A21
DQ0-DQ15
M36D0R6040T
M36D0R6040B
G
F
16
W
F
RP
F
WP
F
E1
P
G
P
W
P
UB
P
LB
P
VSS
V
DDF
V
PPF
V
DDP
E
F
E2
P
A0-A19
Common Address Inputs
DQ0-DQ15
Common Data Input/Output
V
DDF
Flash Memory Power Supply
V
PPF
Common Flash Optional Supply
Voltage for Fast Program & Erase
V
SS
Ground
V
DDP
PSRAM Power Supply
NC
Not Connected Internally
Flash Memory Signals
A21-A20
Address Inputs for the Flash memory
only
E
F
Chip Enable input
G
F
Output Enable input
W
F
Write Enable input
RP
F
Reset input
WP
F
Write Protect input
PSRAM Signals
E1
P
Chip Enable input
G
P
Output Enable input
W
P
Write Enable input
E2
P
Power-down input
UB
P
Upper Byte Enable input
LB
P
Lower Byte Enable input
相關(guān)PDF資料
PDF描述
M36D0R6040T0ZAIT 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
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M36DR432BZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36D0R6040T0ZAIF 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M36D0R6040T0ZAIT 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M36DR216C120ZA6T 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36DR232 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
M36DR232A 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
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