參數(shù)資料
型號(hào)： M36D0R6040T0ZAI
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
中文描述： 64兆位（4Mb的x16插槽，多銀行，頁(yè)）閃存和16兆位（最快1Mb × 16）移動(dòng)存儲(chǔ)芯片，多芯片封裝
文件頁(yè)數(shù)： 7/18頁(yè)
文件大?。?/td> 329K
代理商： M36D0R6040T0ZAI
7/18
M36D0R6040T0, M36D0R6040B0
If V
PPF
is kept in a low voltage range (0V to V
DDF
)
V
PPF
is seen as a control input. In this case a volt-
age lower than V
PPLKF
gives an absolute protec-
tion against Program or Erase, while V
PPF
> V
PP1F
enables these functions (see Tables
7
and
8
, DC
Characteristics for the relevant values). V
PPF
is
only sampled at the beginning of a Program or
Erase; a change in its value after the operation has
started does not have any effect and Program or
Erase operations continue.
If V
PPF
is in the range of V
PPHF
it acts as a power
supply pin. In this condition V
PPF
must be stable
until the Program/Erase algorithm is completed.
V
SS
Ground.
V
SS
is the common ground refer-
ence for all voltage measurements in the Flash
(core and I/O Buffers) and PSRAM chips.
Note: Each Flash memory device in a system
should have its supply voltage (V
DDF
) and the
program supply voltage V
PPF
decoupled with a
0.1μF ceramic capacitor close to the pin (high
frequency, inherently low inductance capaci-
tors should be as close as possible to the
package). See
Table 5., AC Measurement Load
Circuit
. The PCB track widths should be suffi-
cient to carry the required V
PPF
program and
erase currents.
相關(guān)PDF資料
PDF描述
M36D0R6040T0 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M36D0R6040B0ZAIE 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M36D0R6040T0ZAIE Circular Connector; No. of Contacts:26; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:16-26 RoHS Compliant: No
M36D0R6040T0ZAIT 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M36DR432ADZA Circular Connector; No. of Contacts:13; Series:LJTPQ00R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36D0R6040T0ZAIE 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M36D0R6040T0ZAIF 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M36D0R6040T0ZAIT 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M36DR216C120ZA6T 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36DR232 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
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