參數(shù)資料
型號： M36D0R6040T0
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
中文描述： 64兆位（4Mb的x16插槽，多銀行，頁）閃存和16兆位（最快1Mb × 16）移動存儲芯片，多芯片封裝
文件頁數(shù)： 14/18頁
文件大?。?/td> 329K
代理商： M36D0R6040T0
M36D0R6040T0, M36D0R6040B0
14/18
Table 9. PSRAM DC Characteristics
Symbol
Parameter
Note: 1. The maximum DC voltage on input and I/O pins is V
DDP
+0.2V. During voltage transitions, inputs may overshoot V
DDP
by 1.0V for
periods of up to 5ns.
2. The minimum DC voltage on input or I/O pins is –0.3V. During voltage transitions, inputs may undershoot V
SS
by 1.0V for periods
of up to 5ns.
Test Condition
Min
Max
Unit
I
CC1
V
CC
Active Current
V
DDP
= 1.95V,
V
IN
= V
IH
or V
IL
,
E1
P
= V
IL
and E2
P
= V
IH
,
I
OUT
= 0mA
t
AVAV
Read /
t
AVAV
Write =
minimum
20
mA
I
CC2
t
AVAV
Read /
t
AVAV
Write =
maximum
3
mA
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDP
–1
1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDP
–1
1
μA
I
PD
Deep Power Down Current
V
DDP
= 1.95V,
E1
P
≥
V
DDP
– 0.2V or E1
P
≤
V
IL
,
V
IN
≥
V
DDP
– 0.2V or V
IN
≤
0.2V
10
μA
I
SB
Standby Supply Current
CMOS
V
DDP
= 1.95V,
E1
P
= E2
P
≥
V
DDP
– 0.2V,
I
OUT
= 0mA
110
μA
V
IH (1)
Input High Voltage
0.8V
DDP
V
DDP
+
0.2
V
V
IL (2)
Input Low Voltage
–0.3
0.4
V
V
OH
Output High Voltage
I
OH
= –0.5mA
V
DDP
– 0.2
V
V
OL
Output Low Voltage
I
OL
= 1mA
0.2
V
相關(guān)PDF資料
PDF描述
M36D0R6040B0ZAIE 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M36D0R6040T0ZAIE Circular Connector; No. of Contacts:26; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:16-26 RoHS Compliant: No
M36D0R6040T0ZAIT 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M36DR432ADZA Circular Connector; No. of Contacts:13; Series:LJTPQ00R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle
M36DR432BZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36D0R6040T0ZAI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M36D0R6040T0ZAIE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M36D0R6040T0ZAIF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M36D0R6040T0ZAIT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
M36DR216C120ZA6T 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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