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參數(shù)資料
| 型號： | M368L6423ETM-LC5 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 184pin Unbuffered Module based on 256Mb E-die 64/72-bit ECC/Non ECC |
| 中文描述： | 184pin緩沖模塊，基于256Mb電子模具64/72-bit ECC的/非ECC |
| 文件頁數(shù)： | 3/19頁 |
| 文件大?。?/td> | 287K |
| 代理商： | M368L6423ETM-LC5 |
DDR SDRAM
Revision 1.0 December, 2003
256MB, 512MB DDR466 Unbuffered DIMM
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Operating Frequencies
Part Number
M368L3223ETM-C(L)C5
M368L6423ETM-C(L)C5
M381L3223ETM-C(L)C5
M381L6423ETM-C(L)C5
Density
256MB
512MB
256MB
512MB
Organization
32M x 64
64M x 64
32M x 72
64M x 72
Component Composition
32Mx8( K4H560838E) * 8EA
32Mx8( K4H560838E) * 16EA
32Mx8( K4H560838E) * 9EA
32Mx8( K4H560838E) * 18EA
Height
1,250mil
1,250mil
1,250mil
1,250mil
C5(DDR466@CL=3)
233MHz
3-4-4
Speed @CL3
CL-tRCD-tRP
Feature
Power supply : Vdd: 2.6V ± 0.1V, Vddq: 2.6V ± 0.1V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
PCB : Height 1,250 (mil), single (256MB) and double(512MB) sided
SSTL_2 Interface
184Pin Unbuffered DIMM based on 256Mb E-die (x8)
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| M36L0R7050L1ZAME | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
| M36L0R7050L1ZAMF | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
| M36L0R7050U1 | 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M368L6423ETN-A2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module |
| M368L6423ETN-AA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module |
| M368L6423ETN-B0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module |
| M368L6423ETN-CB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module |
| M368L6423ETN-CLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module |
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