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參數(shù)資料
| 型號(hào)： | M366S3323DTS-L7A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| 中文描述： | 32Mx64 SDRAM的內(nèi)存在16Mx8，4Banks，4K的刷新，3.3社民黨基于同步DRAM |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | M366S3323DTS-L7A |
M366S3323DTS
PC133/PC100 Unbuffered DIMM
Rev. 0.1 Sept. 2001
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
Parameter
Symbol
- 7C
- 7A
- 1H
- 1L
Unit
Note
Min
Max
Min
Max
Min
Max
Min
Max
CLK cycle
time
CAS latency=3
t
CC
7.5
1000
7.5
1000
10
1000
10
1000
ns
1
CAS latency=2
7.5
10
10
12
CLK to valid
output delay
CAS latency=3
t
SAC
5.4
5.4
6
6
ns
1,2
CAS latency=2
5.4
6
6
7
Output data
hold time
CAS latency=3
t
OH
3
3
3
3
ns
2
CAS latency=2
3
3
3
3
CLK high pulse width
t
CH
2.5
2.5
3
3
ns
3
CLK low pulse width
t
CL
2.5
2.5
3
3
ns
3
Input setup time
t
SS
1.5
1.5
2
2
ns
3
Input hold time
t
SH
0.8
0.8
1
1
ns
3
CLK to output in Low-Z
t
SLZ
1
1
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
t
SHZ
5.4
5.4
6
6
ns
CAS latency=2
5.4
6
6
7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M366S3323DTS-L7C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
| M366S3323ETS-C7A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Unbuffered Module |
| M366S3323ETU-C7A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Unbuffered Module |
| M366S3323FT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Unbuffered Module |
| M366S3323FTS-C7A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Unbuffered Module |
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