- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383296 > M366S0924FTS-C7A (SAMSUNG SEMICONDUCTOR CO. LTD.) SDRAM Unbuffered Module PDF資料下載
參數(shù)資料
| 型號： | M366S0924FTS-C7A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | SDRAM Unbuffered Module |
| 中文描述： | 內(nèi)存緩沖模塊 |
| 文件頁數(shù)： | 11/26頁 |
| 文件大?。?/td> | 486K |
| 代理商： | M366S0924FTS-C7A |
64MB, 128MB, 256MB Unbuffered DIMM
Rev. 1.3 May 2004
SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
1.0 * # of component
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
Note :
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
3.0
3.3
3.6
V
Input high voltage
V
IH
2.0
3.0
V
DDQ
+0.3
V
1
Input low voltage
V
IL
-0.3
0
0.8
V
2
Output high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
I
LI
-10
-
10
uA
3
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
= 1.4V
±
200
mV)
Parameter
Sym-
bol
M366S0924FTS
Min
15
15
15
10
10
8
9
M366S1723FTS(U)
Min
25
25
25
15
15
8
9
M366S3323FTS(U)
Min
45
45
25
15
15
10
13
Unit
Max
25
25
25
13
15
10
12
Max
45
45
45
21
25
12
12
Max
85
85
45
21
25
15
18
Input capacitance (A
0
~ A
11
)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE)
Input capacitance (CLK)
Input capacitance (CS)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
OUT
pF
pF
pF
pF
pF
pF
pF
1. V
IH
(max) = 5.6V AC.The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :
Pin
Sym-
bol
M374S1723FTS(U)
Min
28
28
28
18
18
8
9
M374S3323FTS(U)
Min
50
50
28
18
18
13
13
Unit
Max
50
50
50
25
30
10
12
Max
95
95
50
25
30
20
18
Input capacitance (A
0
~ A
11
)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE)
Input capacitance (CLK)
Input capacitance (CS)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
OUT
pF
pF
pF
pF
pF
pF
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M366S1723FTS-C7A | SDRAM Unbuffered Module |
| M366S1723FTU-C7A | SDRAM Unbuffered Module |
| M374S1723FTU-C7A | SDRAM Unbuffered Module |
| M374S3323FTU-C7A | SDRAM Unbuffered Module |
| M374S3323FTS-C7A | SDRAM Unbuffered Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M366S0924FTS-C7A00 | 制造商:Samsung Semiconductor 功能描述:DRAM Module SDRAM 64Mbyte 168UDIMM Tray |
| M366S0924IUS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Product Guide |
| M366S1623DT0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC100 Unbuffered DIMM |
| M366S1623DT0-C1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC100 Unbuffered DIMM |
| M366S1623DT0-C1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC100 Unbuffered DIMM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。