- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359055 > M35080-MN6T (意法半導(dǎo)體) 8 Kbit Serial SPI Bus EEPROM With Incremental Registers PDF資料下載
參數(shù)資料
| 型號： | M35080-MN6T |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | EEPROM |
| 英文描述： | 8 Kbit Serial SPI Bus EEPROM With Incremental Registers |
| 中文描述： | 8千位串行SPI總線的EEPROM與增量寄存器 |
| 文件頁數(shù)： | 6/18頁 |
| 文件大小： | 139K |
| 代理商： | M35080-MN6T |
M35080
6/18
(SRWD, BP0, BP1) become frozen at a constant
value. The updated value of these bits becomes
available when a new RDSR instruction is execut-
ed, after completion of the write cycle. On the oth-
er hand, the two read-only bits (WEL, WIP) are
dynamically updated during internal write cycles.
Using this facility, it is possible to poll the WIP bit
to detect the end of the internal write cycle.
The Comparator bit (INC) indicates if the new val-
ue written in the 16 first word is lower ‘1’ or higher
‘0’ than the previous stored value.
The UV bit indicates if the memory chip has been
erased.
Write Status Register (WRSR)
The format of the WRSR instruction is shown in
Figure 7. After the instruction and the eight bits of
the status register have been latched-in, the inter-
nal Write cycle is triggered by the rising edge of
the S line. This must occur after the falling edge of
the 16
th
clock pulse, and before the rising edge of
the 17
th
clock (as indicated in Figure 7), otherwise
the internal write sequence is not performed.
The WRSR instruction is used for the following:
I
to select the size of memory area that is to be
write-protected
I
to select between SPM (Software Protected
Mode) and HPM (Hardware Protected Mode).
The size of the write-protection area applies equal-
ly in SPM and HPM. The BP1 and BP0 bits of the
status register have the appropriate value (see Ta-
ble 7) written into them after the contents of the
protected area of the EEPROM have been written.
The initial delivery state of the BP1 and BP0 bits is
00, indicating a write-protection size of 0.
Figure 7. WRSR: Write Status Register Sequence
C
D
AI01797
S
Q
2
1
3
4
5
6
7
8
9 10 11 12 13 14 15
HIGH IMPEDANCE
INSTRUCTION
STATUS REG.
0
7
6
5
4
3
2
0
1
MSB
Figure 6. RDSR: Read Status Register Sequence
C
D
S
2
1
3
4
5
6
7
8
9 10 11 12 13 14 15
INSTRUCTION
0
AI02031
Q
7
6
5
4
3
2
1
0
STATUS REG. OUT
HIGH IMPEDANCE
MSB
7
6
5
4
3
2
1
0
STATUS REG. OUT
MSB
MSB
7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M35080-MN3T | 8 Kbit Serial SPI Bus EEPROM With Incremental Registers |
| M35080-BN6T | 8 Kbit Serial SPI Bus EEPROM With Incremental Registers |
| M35080-BN3T | 8 Kbit Serial SPI Bus EEPROM With Incremental Registers |
| M35101-W4 | Contactless Memory Chip 13.56 MHz, 2048-bit High Endurance EEPROM |
| M36D0R6040T0ZAIF | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M350X30MMN70 | 制造商:n/a 功能描述:Ships in 2 days |
| M3-51 | 制造商:Southco 功能描述: |
| M35101 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Memory Micromodules General Information for D1, D2 and C Packaging |
| M35101-C20 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Contactless Memory Chip 13.56 MHz, 2048-bit High Endurance EEPROM |
| M35101-C30 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Contactless Memory Chip 13.56 MHz, 2048-bit High Endurance EEPROM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。