參數(shù)資料
型號: M34F04-WMN6T
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4Kbit Serial I2C Bus EEPROM With Hardware Write Control on Top Half of Memory
中文描述: 4Kbit串行I2C總線的EEPROM,帶有硬件寫控制記憶的上半部分
文件頁數(shù): 14/20頁
文件大小: 262K
代理商: M34F04-WMN6T
M34F04
14/20
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC Characteristic tables that follow are de-
rived from tests performed under the Measure-
ment Conditions summarized in the relevant
tables. Designers should check that the operating
conditions in their circuit match the measurement
conditions when relying on the quoted parame-
ters.
Table 5. Operating Conditions
Table 6. AC Measurement Conditions
Figure 10. AC Measurement I/O Waveform
Table 7. Input Parameters
Note: 1. T
A
= 25 °C, f = 400 kHz
2. Sampled only, not 100% tested.
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
2.5
5.5
V
T
A
Ambient Operating Temperature
–40
85
°C
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
100
pF
Input Rise and Fall Times
50
ns
Input Levels
0.2V
CC
to 0.8V
CC
V
Input and Output Timing Reference Levels
0.3V
CC
to 0.7V
CC
V
Symbol
Parameter
1,2
Test Condition
Min
.
Max
.
Unit
C
IN
Input Capacitance (SDA)
8
pF
C
IN
Input Capacitance (other pins)
6
pF
Z
WCL
WC Input Impedance
V
IN
< 0.3V
CC
5
70
k
Z
WCH
WC Input Impedance
V
IN
> 0.7V
CC
500
k
t
NS
Pulse width ignored
(Input Filter on SCL and SDA)
Single glitch
100
ns
AI00825B
0.8VCC
0.2VCC
0.7VCC
0.3VCC
Input and Output
Timing Reference Levels
Input Levels
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