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參數(shù)資料
| 型號： | M34D64WMNT6 |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 64/32 Kbit Serial IC Bus EEPROM With Hardware Write Control on Top Quarter of Memory |
| 中文描述： | 64/32千位串行IC總線EEPROM，帶有硬件寫控制記憶的熱門季 |
| 文件頁數(shù)： | 9/15頁 |
| 文件大?。?/td> | 119K |
| 代理商： | M34D64WMNT6 |
9/15
M34D64, M34D32
Table 7. DC Characteristics
(T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 4.5 to 5.5 V or 2.5 to 5.5 V)
(T
A
= 0 to 70 °C or –20 to 85 °C; V
CC
= 1.8 to 3.6 V
1
)
Symbol
Parameter
Note: 1. This is preliminary data.
Table 8. Input Parameters
1
(T
A
= 25 °C, f = 400 kHz)
Symbol
Parameter
Note: 1. Sampled only, not 100% tested.
Test Condition
Min.
Max.
Unit
I
LI
Input Leakage Current
(SCL, SDA)
0 V
≤
V
IN
≤
V
CC
± 2
μA
I
LO
Output Leakage Current
0 V
≤
V
OUT
≤
V
CC,
SDA in Hi-Z
± 2
μA
I
CC
Supply Current
V
CC
=5V, f
c
=400kHz (rise/fall time < 30ns)
2
mA
-W series:
V
CC
=2.5V, f
c
=400kHz (rise/fall time < 30ns)
1
mA
-R series:
V
CC
=1.8V, f
c
=100kHz (rise/fall time < 30ns)
0.8
1
mA
I
CC1
Supply Current (Stand-by)
V
IN
= V
SS
or
V
CC
, V
CC
= 5 V
10
μA
I
CC2
Supply Current (Stand-by)
V
IN
= V
SS
or
V
CC
, V
CC
= 2.5 V
2
μA
I
CC3
Supply Current (Stand-by)
V
IN
= V
SS
or
V
CC
, V
CC
= 1.8 V
1
1
μA
V
IL
Input Low Voltage
(E0-E2, SCL, SDA)
–0.3
0.3 V
CC
V
V
IH
Input High Voltage
(E0-E2, SCL, SDA)
0.7V
CC
V
CC
+1
V
V
ILW
Input Low Voltage (WC)
–0.3
0.5
V
V
IHW
Input High Voltage (WC)
0.7V
CC
V
CC
+1
V
V
OL
Output Low
Voltage
I
OL
= 3 mA, V
CC
= 5 V
0.4
V
-W series:
I
OL
= 2.1 mA, V
CC
= 2.5 V
0.4
V
-R series:
I
OL
= 0.15 mA, V
CC
= 1.8 V
0.2
1
V
Test Condition
Min.
Max.
Unit
C
IN
Input Capacitance (SDA)
8
pF
C
IN
Input Capacitance (other pins)
6
pF
Z
WCL
WC Input Impedance
V
IN
< V
ILW
50
300
k
Z
WCH
WC Input Impedance
V
IN
> V
IHW
500
k
t
NS
Pulse width ignored
(Input Filter on SCL and SDA)
Single glitch
50
ns
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