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參數(shù)資料
| 型號(hào)： | M34C02-WBN6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2 Kbit Serial IC Bus EEPROM For DIMM Serial Presence Detect |
| 中文描述： | 2千位串行IC總線的EEPROM內(nèi)存串行存在檢測(cè) |
| 文件頁數(shù)： | 2/19頁 |
| 文件大?。?/td> | 147K |
| 代理商： | M34C02-WBN6T |
M34C02
2/19
the memory become permanently write protected.
Care must be taken when using this sequence as
its effect cannot be reversed. In addition, the
device allows the entire memory area to be write
protected, using the WC input (for example by
tieing this input to V
CC
).
The M34C02 is a 2 Kbit electrically erasable pro-
grammable memory (EEPROM), organized as
256x8 bits, fabricated with STMicroelectronics’
High Endurance, Advanced, CMOS technology.
This guarantees an endurance typically well
above one million Erase/Write cycles, with a data
retention of 40 years. These memory devices
operate with a power supply down to 2.2 V for the
M34C02-L.
The M34C02 is available in Plastic Dual In-line,
Plastic Small Outline and Thin Shrink Small
Outline packages.
These memory devices are compatible with the
I
2
C memory standard. This is a two wire serial
interface that uses a bi-directional data bus and
serial clock. The memory carries a built-in 4-bit
Device Type Identifier code (1010) in accordance
with the I
2
C bus definition to access the memory
area and a second Device Type Identifier Code
(0110) to access the Protection Register. These
codes are used together with three chip enable
inputs (E2, E1, E0) so that up to eight 2 Kbit
devices may be attached to the I2C bus and
selected individually.
The memory behaves as a slave device in the I
2
C
protocol, with all memory operations synchronized
by the serial clock. Read and Write operations are
initiated by a START condition, generated by the
bus master. The START condition is followed by a
Device Select Code and RW bit (as described in
Table 3), terminated by an acknowledge bit.
When writing data to the memory, the memory
inserts an acknowledge bit during the 9
th
bit time,
following the bus master’s 8-bit transmission.
Figure 2A. DIP Connections
SDA
VSS
SCL
WC
E1
E2
E0
VCC
AI01932
M34C02
1
2
3
4
8
7
6
5
Figure 2B. SO and TSSOP Connections
1
2
3
4
AI01933
8
7
6
5
SDA
VSS
SCL
WC
E1
E2
E0
VCC
M34C02
Table 2. Absolute Maximum Ratings
1
Note: 1.
Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the ST SURE Program and other relevant quality documents.
2. MIL-STD-883C, 3015.7 (100 pF, 1500
)
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
-40 to 85
°C
T
STG
Storage Temperature
-65 to 150
°C
T
LEAD
Lead Temperature during Soldering
PSDIP8: 10 sec
SO8: 40 sec
TSSOP8: 40 sec
260
215
215
°C
V
IO
Input or Output range
-0.6 to 6.5
V
V
CC
Supply Voltage
-0.3 to 6.5
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
2
4000
V
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