參數(shù)資料
型號: M34513E4SP
廠商: Mitsubishi Electric Corporation
英文描述: SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER
中文描述: 單芯片4位微機(jī)的CMOS
文件頁數(shù): 90/106頁
文件大?。?/td> 1304K
代理商: M34513E4SP
90
4513/4514 Group
SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER
MITSUBISHI MICROCOMPUTERS
PRELIMINARY
Notice: This is not a final specification.
change.
Some parametric limits are subject to
A-D CONVERTER RECOMMENDED OPERATING CONDITIONS
(Comparator mode included, Ta = –20
°
C to 85
°
C, unless otherwise noted)
Symbol
V
DD
V
IA
f(X
IN
)
Parameter
Supply voltage
Analog input voltage
Oscillation frequency
A-D CONVERTER CHARACTERISTICS
(Ta = –20
°
C to 85
°
C, unless otherwise noted)
Conditions
Unit
V
V
MHz
MHz
Middle-speed mode, V
DD
2.7 V
High-speed mode, V
DD
2.7 V
Min.
2.7
0
0.8
0.4
Typ.
Max.
5.5
V
DD
Limits
Symbol
V
0T
V
FST
IA
DD
T
CONV
Parameter
Resolution
Linearity error
Differential non-linearity error
Zero transition voltage
Full-scale transition voltage
A–D operating current
A-D conversion time
Comparator resolution
Comparator error (Note)
Comparator comparison time
Test conditions
Unit
bits
LSB
LSB
mV
mV
mA
μ
s
bits
mV
μ
s
Ta = 25
°
C, V
DD
= 2.7 V to 5.5 V
Ta = –25
°
C to 85
°
C, V
DD
= 3.0 V to 5.5 V
Ta = 25
°
C, V
DD
= 2.7 V to 5.5 V
Ta = –25
°
C to 85
°
C, V
DD
= 3.0 V to 5.5 V
V
DD
= 5.12 V
V
DD
= 3.072 V
V
DD
= 5.12 V
V
DD
= 3.072 V
V
DD
= 5.0 V
V
DD
= 3.0 V
f(X
IN
) = 4.0 MHz, Middle-speed mode
f(X
IN
) = 4.0 MHz, High-speed mode
Comparator mode
V
DD
= 5.12 V
V
DD
= 3.072 V
f(X
IN
) = 4.0 MHz, Middle-speed mode
f(X
IN
) = 4.0 MHz, High-speed mode
Min.
0
0
5105
3060
Typ.
5
3
5115
3069
0.7
0.2
Max.
10
±
2
±
0.9
20
15
5125
3075
2.0
0.4
93.0
46.5
8
±
20
±
15
12
6
Limits
f(X
IN
) = 0.4 MHz to 4.0 MHz
f(X
IN
) = 0.4 MHz to 2.0 MHz
Note: As for the error from the ideal value in the comparator mode, when the contents of the comparator register is n, the logic value of the comparison volt-
age V
ref
which is generated by the built-in DA converter can be obtained by the following formula.
Logic value of comparison voltage V
ref
V
ref
=
n
n = Value of register AD (n = 0 to 255)
V
DD
256
VOLTAGE DROP DETECTION CIRCUIT CHARACTERISTICS
(Ta = –20
°
C to 85
°
C, unless otherwise noted)
Test conditions
Ta = 25
°
C
V
DD
= 5.0 V
Parameter
Detection voltage
Operation current of voltage
drop detection circuit
Symbol
V
RST
I
RST
Limits
Typ.
Unit
V
μ
A
Min.
2.7
3.3
3.5
50
Max.
4.1
3.7
100
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