參數(shù)資料
型號: M312L5720DZ3-CB3
元件分類: DRAM
英文描述: 256M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
封裝: ROHS COMPLIANT, DIMM-184
文件頁數(shù): 8/28頁
文件大?。?/td> 661K
代理商: M312L5720DZ3-CB3
DDR SDRAM
512MB, 1GB, 2GB Registered DIMM
Rev. 1.0 April 2006
(VDD=2.7V, T = 10°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
CC (DDR400@CL=3)
B3 (DDR333@CL=2.5)
Unit
Notes
IDD0
1,830
1,700
mA
IDD1
2,100
1,970
mA
IDD2P
420
mA
IDD2F
1,020
mA
IDD2Q
600
mA
IDD3P
780
650
mA
IDD3N
1,290
1,160
mA
IDD4R
2,150
2,010
mA
IDD4W
2,330
2,100
mA
IDD5
2,730
2,600
mA
IDD6
Normal
420
mA
Low power
410
mA
IDD7A
4,220
3,990
mA
(VDD=2.7V, T = 10°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
CC (DDR400@CL=3)
B3 (DDR333@CL=2.5)
Unit
Notes
IDD0
2,500
2,230
mA
IDD1
2,770
2,500
mA
IDD2P
590
mA
IDD2F
1,420
mA
IDD2Q
950
mA
IDD3P
1,310
1,040
mA
IDD3N
1,960
1,690
mA
IDD4R
2,810
2,540
mA
IDD4W
2,990
2,630
mA
IDD5
3,400
3,130
mA
IDD6
Normal
590
mA
Low power
560
mA
IDD7A
4,880
4,520
mA
9.5 1GB, 128M x 72 ECC Module (M312L2923DZ3)
9.4 512MB, 64M x 72 ECC Module (M312L6523DZ3)
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